IRF830ASTRLPBF

VISHAY INTERTECHNOLOGY INC

no image
 
IRF830ASTRLPBF

IRF830ASTRLPBF

Availability
Unavailable
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time

15 results found
424654-E
Available
Available
High
High
Decreasing
Decreasing
Decreasing
Decreasing
53047-0510
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
78171-0002
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
4053G-S16-R
Available
Available
High
High
Stable
Stable
Stable
Stable
TMP1075DGKR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
EC111012010H
Available
Available
High
High
Stable
Stable
Stable
Stable
0402B152K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0603B223K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
SKY13414-485LF
Available
Available
Low
Low
Increasing
Increasing
Increasing
Increasing
TLE6220GPAUMA2
Available
Available
High
High
Stable
Stable
Stable
Stable
REF192GSZ-REEL7
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
S40FC008C3B1I00...
Available
Available
High
High
Stable
Stable
Stable
Stable
LM2594HVMX-ADJ/...
Constrained
Constrained
Low
Low
Increasing
Increasing
Increasing
Increasing
MT40A512M16LY-0...
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Stable
Stable
MT25QL128ABA1EW...
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing

Semiconductors

Transistors

Lead Time     15 weeks
Data Sheet     Download IRF830ASTRLPBF datasheet IRF830ASTRLPBF

Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Data

Manufacturer vishay intertechnology inc
MPN IRF830ASTRLPBF
Application SWITCHING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 74.0000
Drain Current-Max (ID) (A) 5.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 500.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 230.0000
Pulsed Drain Current-Max (IDM) (A) 20.0000
Drain-source On Resistance-Max (ohm) 1.4000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IRF830ASTRLPBF optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IRF830ASTRLPBF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IRF830ASTRLPBF in the documentation section.

Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFP240PBF