IRF830ASTRLPBF
Availability
Design risk
Price trend
Lead time
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Application | SWITCHING |
| JESD-30 Code | R-PSSO-G2 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | MATTE TIN |
| DLA Qualification | Not Qualified |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 74 |
| Drain Current-Max (ID) (A) | 5 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 500 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Avalanche Energy Rating (Eas) (mJ) | 230 |
| Pulsed Drain Current-Max (IDM) (A) | 20 |
| Drain-source On Resistance-Max (ohm) | 1.4 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Submit request
CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Vishay Intertechnology, Inc. IRF830ASTRLPBF in the documentation section.
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
As part of the category Semiconductors and subcategory Semiconductors, IRF830ASTRLPBF optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, IRF830ASTRLPBF ensures stable output voltage even when the load changes. Its Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET makes it a reliable element in multi-level power systems.
