IRF830ASTRLPBF VISHAY INTERTECHNOLOGY INC

IRF830ASTRLPBF VISHAY INTERTECHNOLOGY INC
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Semiconductors

Transistors

Lead Time     9 weeks

Datasheet

    Download IRF830ASTRLPBF datasheet IRF830ASTRLPBF

Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Technical Data

Manufacturer vishay intertechnology inc
MPN IRF830ASTRLPBF
Application SWITCHING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 74.0000
Drain Current-Max (ID) (A) 5.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 500.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 230.0000
Pulsed Drain Current-Max (IDM) (A) 20.0000
Drain-source On Resistance-Max (ohm) 1.4000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IRF830ASTRLPBF optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IRF830ASTRLPBF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IRF830ASTRLPBF in the documentation section.

Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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