BYG23T-M3/TR

Vishay Intertechnology, Inc.

BYG23T-M3/TR

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Design risk

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Lead time

Semiconductors

Rectifier Diodes

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Semiconductors

Rectifier Diodes

Lead time 7 weeks
Data sheet BYG23T-M3/TR

Diode Switching 1.3KV 1A 2-Pin SMA T/R

Technical Data
Diode Type RECTIFIER DIODE
Technology AVALANCHE
Application GENERAL PURPOSE
JESD-30 Code R-PDSO-F2
Configuration SINGLE
JEDEC-95 Code DO-214AC
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
Terminal Finish MATTE TIN
Number of Phases 1
Terminal Position DUAL
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Output Current-Max (A) 1
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max (V) 1300
Reverse Recovery Time-Max (us) 0.075
Operating Temperature-Max (Cel) 150
Time@Peak Reflow Temperature-Max (s) 40

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Vishay Intertechnology, Inc. BYG23T-M3/TR?

You can download the user manual and technical specifications for Vishay Intertechnology, Inc. BYG23T-M3/TR in the documentation section.

What are the key features of Vishay Intertechnology, Inc. BYG23T-M3/TR?

Diode Switching 1.3KV 1A 2-Pin SMA T/R

How does Vishay Intertechnology, Inc. BYG23T-M3/TR contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, BYG23T-M3/TR optimizes energy distribution in electronic devices. Its Diode Switching 1.3KV 1A 2-Pin SMA T/R allows minimizing losses and increasing the overall system efficiency.

Why is BYG23T-M3/TR suitable for complex power management systems?

As a component of the subcategory Semiconductors, BYG23T-M3/TR ensures stable output voltage even when the load changes. Its Diode Switching 1.3KV 1A 2-Pin SMA T/R makes it a reliable element in multi-level power systems.