RU1C001UNTCL ROHM SEMICONDUCTOR

RU1C001UNTCL ROHM SEMICONDUCTOR
Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time
15 results found
A202203
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
LMV331IDCKR
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
M30624FGAFP
Available
Available
High
High
Stable
Stable
Stable
Stable
WR25W1R80FTL
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
AD7687BRMZRL7
Available
Available
Low
Low
Increasing
Increasing
Increasing
Increasing
FM24CL04B-GTR
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Increasing
Increasing
TPS564208DDCR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
0402B153K500CT
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
0805B103K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
1808WC102KAT2A
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
S242B102K502CT
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Stable
Stable
ADUM2402BRWZ-RL
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
CMKT3904TRPBFRE...
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
EPM3128ATC144-1...
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
67-23/R6GHBHC-B...
Available
Available
Low
Low
Increasing
Increasing
Stable
Stable

Semiconductors

Transistors

Lead Time     24 weeks
Data Sheet     Download RU1C001UNTCL datasheet RU1C001UNTCL

Trans MOSFET N-CH 20V 0.1A 3-Pin UMTF T/R

Technical Data

Manufacturer rohm semiconductor
MPN RU1C001UNTCL
Application SWITCHING
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Tin (Sn)
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.1500
Drain Current-Max (ID) (A) 0.1000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Pulsed Drain Current-Max (IDM) (A) 0.4000
Drain-source On Resistance-Max (ohm) 4.2000
Time@Peak Reflow Temperature-Max (s) 10.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, RU1C001UNTCL optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 20V 0.1A 3-Pin UMTF T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, RU1C001UNTCL ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for RU1C001UNTCL in the documentation section.

Trans MOSFET N-CH 20V 0.1A 3-Pin UMTF T/R

UFZVFHTE-178-2B