TPD1E10B06DPYR

Texas Instruments Incorporated

TPD1E10B06DPYR

Availability

Design risk

Price trend

Lead time

Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

15 results found

Availability

Design risk

Price trend

Lead time

Available
Low
Increase
Stable
300568EZ (WINCHESTERINTERCONNECT)
View Details
Available
Low
Stable
Increase
AP5100WG-7 (DIODESINC)
View Details
Unavailable
Low
Stable
Stable
CR10-4321-FK (ASJPTELTD)
View Details
Unavailable
Low
Stable
Stable
CR32-6R49-FK (ASJPTELTD)
View Details
Available
High
Stable
Stable
WF25U2151BTL (WALSINTECHNOLOGYCORP)
View Details
Unavailable
Low
Decrease
Increase
WR04X1212FTL (WALSINTECHNOLOGYCORP)
View Details
Available
High
Stable
Stable
TLP250H(TP1F) (TOSHIBACORP)
View Details
Constrained
Medium
Stable
Stable
0805B473K500CT (WALSINTECHNOLOGYCORP)
View Details
Constrained
Low
Decrease
Stable
0805X106K160CT (WALSINTECHNOLOGYCORP)
View Details
Available
High
Decrease
Stable
ADE7854ACPZ-RL (ANALOGDEVICESINC)
View Details
Available
Medium
Stable
Increase
ADN8835ACPZ-R7 (ANALOGDEVICESINC)
View Details
Available
High
Stable
Stable
LM5116MHX/NOPB (TEXASINSTRUMENTSINC)
View Details
Unavailable
Low
Stable
Stable
SH21B105K160CT (WALSINTECHNOLOGYCORP)
View Details
Available
High
Stable
Stable
LE910C1EU10T100700 (TELITCOMMUNICATIONSPLC)
View Details
Constrained
Low
Increase
Stable
NACE470M50V6.3X8TR15F (NICCOMPONENTSCORP)
View Details

Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

Lead time 16 weeks
Data sheet TPD1E10B06DPYR

12-pF, ±5.5V, ±30-kV ESD protection diode in 0402 and SOD-523 package 2-X1SON -40 to 125

Technical Data
Polarity BIDIRECTIONAL
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Technology AVALANCHE
JESD-30 Code R-PBCC-N2
Configuration SINGLE, 1 CHANNEL
Package Shape RECTANGULAR
Package Style (Meter) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
J-STD-609 Code e4
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Position BOTTOM
Additional Feature Number of channels : 1
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Clamping Voltage-Max (V) 10
Reverse Current-Max (uA) 0.1
Breakdown Voltage-Min (V) 6
Breakdown Voltage-Nom (V) 6
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max (V) 5.5
Operating Temperature-Max (Cel) 125
Operating Temperature-Min (Cel) -40
Non-rep Peak Rev Power Dis-Max (W) 90
Screening Level / Reference Standard IEC-61000-4-2, 4-5
Time@Peak Reflow Temperature-Max (s) 30

Submit request

CONTACT REASON

Connect with us

Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Texas Instruments Incorporated TPD1E10B06DPYR?

You can download the user manual and technical specifications for Texas Instruments Incorporated TPD1E10B06DPYR in the documentation section.

What are the key features of Texas Instruments Incorporated TPD1E10B06DPYR?

12-pF, ±5.5V, ±30-kV ESD protection diode in 0402 and SOD-523 package 2-X1SON -40 to 125

How does Texas Instruments Incorporated TPD1E10B06DPYR contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, TPD1E10B06DPYR optimizes energy distribution in electronic devices. Its 12-pF, ±5.5V, ±30-kV ESD protection diode in 0402 and SOD-523 package 2-X1SON -40 to 125 allows minimizing losses and increasing the overall system efficiency.

Why is TPD1E10B06DPYR suitable for complex power management systems?

As a component of the subcategory Semiconductors, TPD1E10B06DPYR ensures stable output voltage even when the load changes. Its 12-pF, ±5.5V, ±30-kV ESD protection diode in 0402 and SOD-523 package 2-X1SON -40 to 125 makes it a reliable element in multi-level power systems.