PMEG4030ER,115

Nexperia BV

PMEG4030ER,115

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Semiconductors

Rectifier Diodes

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Semiconductors

Rectifier Diodes

Lead time 16 weeks
Data sheet PMEG4030ER,115

40 V, 3 A low VF Schottky barrier rectifier

Technical Data
Diode Type RECTIFIER DIODE
Technology SCHOTTKY
Application EFFICIENCY
JESD-30 Code R-PDSO-F2
Configuration SINGLE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
Terminal Finish Tin (Sn)
Number of Phases 1
Terminal Position DUAL
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Output Current-Max (A) 3
Power Dissipation-Max (W) 0.57
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max (V) 40
Operating Temperature-Max (Cel) 150
Non-rep Pk Forward Current-Max (A) 50
Time@Peak Reflow Temperature-Max (s) 30

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Nexperia BV PMEG4030ER,115?

You can download the user manual and technical specifications for Nexperia BV PMEG4030ER,115 in the documentation section.

What are the key features of Nexperia BV PMEG4030ER,115?

40 V, 3 A low VF Schottky barrier rectifier

How does Nexperia BV PMEG4030ER,115 contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, PMEG4030ER,115 optimizes energy distribution in electronic devices. Its 40 V, 3 A low VF Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.

Why is PMEG4030ER,115 suitable for complex power management systems?

As a component of the subcategory Semiconductors, PMEG4030ER,115 ensures stable output voltage even when the load changes. Its 40 V, 3 A low VF Schottky barrier rectifier makes it a reliable element in multi-level power systems.