PMEG4030ER,115
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40 V, 3 A low VF Schottky barrier rectifier
Diode Type | RECTIFIER DIODE |
Technology | SCHOTTKY |
Application | EFFICIENCY |
JESD-30 Code | R-PDSO-F2 |
Configuration | SINGLE |
Package Shape | RECTANGULAR |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | FLAT |
J-STD-609 Code | e3 |
Terminal Finish | Tin (Sn) |
Number of Phases | 1 |
Terminal Position | DUAL |
Number of Elements | 1 |
Number of Terminals | 2 |
Package Body Material | PLASTIC/EPOXY |
Diode Element Material | SILICON |
Output Current-Max (A) | 3 |
Power Dissipation-Max (W) | 0.57 |
Moisture Sensitivity Level | 1 |
Peak Reflow Temperature (Cel) | 260 |
Rep Pk Reverse Voltage-Max (V) | 40 |
Operating Temperature-Max (Cel) | 150 |
Non-rep Pk Forward Current-Max (A) | 50 |
Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Nexperia BV PMEG4030ER,115 in the documentation section.
40 V, 3 A low VF Schottky barrier rectifier
As part of the category Semiconductors and subcategory Semiconductors, PMEG4030ER,115 optimizes energy distribution in electronic devices. Its 40 V, 3 A low VF Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, PMEG4030ER,115 ensures stable output voltage even when the load changes. Its 40 V, 3 A low VF Schottky barrier rectifier makes it a reliable element in multi-level power systems.