PXN012-60QLJ

NEXPERIA

PXN012-60QLJ
 
PXN012-60QLJ

PXN012-60QLJ

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
15 results found
JMS-2W+
Available
Available
High
High
Stable
Stable
Stable
Stable
MMBTA44
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
SN6501DBVR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
09195105324
Constrained
Constrained
Medium
Medium
Stable
Stable
Stable
Stable
LM5165YDRCR
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
WF25S122JTL
Available
Available
High
High
Stable
Stable
Stable
Stable
AUIPS2052GTR
Available
Available
High
High
Stable
Stable
Decreasing
Decreasing
MAX810LEUR+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
5M160ZT100I5N
Available
Available
High
High
Stable
Stable
Stable
Stable
MP2451DJ-LF-Z
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
1210B475K101CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
REF02CSZ-REEL7
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
TLP2745(TP,E(T
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
ADM2486BRWZ-REE...
Constrained
Constrained
Low
Low
Increasing
Increasing
Increasing
Increasing
MX66L1G45GMI-08...
Available
Available
High
High
Decreasing
Decreasing
Increasing
Increasing

Semiconductors

Transistors

Lead Time     14 weeks

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

Technical Data

Manufacturer nexperia
MPN PXN012-60QLJ
Application SWITCHING
JESD-30 Code R-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 34.7000
Drain Current-Max (ID) (A) 42.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Feedback Cap-Max (Crss) (pF) 31.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 90.0000
Pulsed Drain Current-Max (IDM) (A) 168.0000
Drain-source On Resistance-Max (ohm) 0.0176
Screening Level / Reference Standard IEC-60134
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, PXN012-60QLJ optimizes energy distribution in electronic devices. Its N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, PXN012-60QLJ ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PXN012-60QLJ in the documentation section.

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33