PXN012-60QLJ NEXPERIA

PXN012-60QLJ NEXPERIA
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Semiconductors

Transistors

Lead Time     14 weeks

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

Technical Data

Manufacturer nexperia
MPN PXN012-60QLJ
Application SWITCHING
JESD-30 Code R-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 34.7000
Drain Current-Max (ID) (A) 42.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Feedback Cap-Max (Crss) (pF) 31.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 90.0000
Pulsed Drain Current-Max (IDM) (A) 168.0000
Drain-source On Resistance-Max (ohm) 0.0176
Screening Level / Reference Standard IEC-60134
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, PXN012-60QLJ optimizes energy distribution in electronic devices. Its N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, PXN012-60QLJ ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PXN012-60QLJ in the documentation section.

N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33

PZU3-3B2L-315