NX138BKM NEXPERIA

NX138BKM NEXPERIA
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NX138BKM Availability: In Stock
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High
Design risk
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Stable
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Stable
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Semiconductors

Transistors

Datasheet

    Download NX138BKM datasheet NX138BKM

Power Field-Effect Transistor, 0.38A I(D), 60V, 2.3ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET

Technical Data

Manufacturer nexperia
MPN NX138BKM
Application SWITCHING
JESD-30 Code R-PBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
FET Technology TRENCH MOSFET
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish TIN
Terminal Position BOTTOM
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 2.8000
Drain Current-Max (ID) (A) 0.3800
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Feedback Cap-Max (Crss) (pF) 2.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Pulsed Drain Current-Max (IDM) (A) 1.5000
Drain-source On Resistance-Max (ohm) 2.3000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, NX138BKM optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 0.38A I(D), 60V, 2.3ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, NX138BKM ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NX138BKM in the documentation section.

Power Field-Effect Transistor, 0.38A I(D), 60V, 2.3ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET

PDTC114YT-215