PDTC114YT,215 NEXPERIA

PDTC114YT,215 NEXPERIA
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Semiconductors

Transistors

Lead Time     8 weeks

50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

Technical Data

Manufacturer nexperia
MPN PDTC114YT,215
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
JEDEC-95 Code TO-236AB
Package Shape RECTANGULAR
Package Style SOT-23 (SC-59,TO-236)
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
VCEsat-Max (V) 0.3000
Terminal Finish TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 100.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260.0000
Collector Current-Max (IC) (A) 0.1000
Operating Temperature-Max (Cel) 150.0000
Collector-emitter Voltage-Max (V) 50.0000
Power Dissipation Ambient-Max (W) 0.2500
Collector-base Capacitance-Max (pF) 3.5000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, PDTC114YT,215 optimizes energy distribution in electronic devices. Its 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, PDTC114YT,215 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PDTC114YT,215 in the documentation section.

50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ

PESD1CAN-U