PMEG3050EP,115

NEXPERIA BV

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PMEG3050EP,115

PMEG3050EP,115

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Semiconductors

Diodes

Lead Time     26 weeks

30 V, 5 A low VF Schottky barrier rectifier

Technical Data

Manufacturer nexperia bv
MPN PMEG3050EP,115
Diode Type RECTIFIER DIODE
Technology SCHOTTKY
Application EFFICIENCY
JESD-30 Code R-PDSO-F2
Configuration SINGLE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
Terminal Finish Tin (Sn)
Number of Phases 1.0000
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Output Current-Max (A) 5.0000
Power Dissipation-Max (W) 0.6250
Moisture Sensitivity Level 1.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Non-rep Pk Forward Current-Max (A) 70.0000
Screening Level / Reference Standard IEC-60134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Diodes, PMEG3050EP,115 optimizes energy distribution in electronic devices. Its 30 V, 5 A low VF Schottky barrier rectifier allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Diodes, PMEG3050EP,115 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PMEG3050EP,115 in the documentation section.

30 V, 5 A low VF Schottky barrier rectifier

1PS79SB30-115