MT47H64M16NF-25EIT:M

MICRON TECHNOLOGY INC

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MT47H64M16NF-25EIT:M

MT47H64M16NF-25EIT:M

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Unavailable
Availability
Design risk
Low
Design risk
Price trend
Increasing
Price trend
Lead time
Increasing
Lead time

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Semiconductors

Semiconductors

Lead Time     39 weeks
Data Sheet     Download MT47H64M16NF-25EIT:M datasheet MT47H64M16NF-25EIT:M

DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray

Technical Data

Manufacturer micron technology inc
MPN MT47H64M16NF-25EIT:M
I/O Type COMMON
Technology CMOS
Width (mm) 8.0000
Access Mode MULTI BANK PAGE BURST
Length (mm) 12.5000
JESD-30 Code R-PBGA-B84
Memory Width 16.0000
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e1
Memory IC Type DDR2 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192.0000
Number of Ports 1.0000
Terminal Finish TIN SILVER COPPER
DLA Qualification Not Qualified
Terminal Position BOTTOM
Memory Organization 64MX16
Number of Functions 1.0000
Number of Terminals 84.0000
Terminal Pitch (mm) 0.8000
Access Time-Max (ns) 0.4000
Number of Words Code 64M
Memory Density (bits) 1073741824.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2000
Supply Voltage-Max (V) 1.9000
Supply Voltage-Min (V) 1.7000
Supply Voltage-Nom (V) 1.8000
Number of Words (words) 67108864.0000
Sequential Burst Length 4,8
Standby Current-Max (A) 0.0100
Supply Current-Max (mA) 260.0000
Interleaved Burst Length 4,8
Package Equivalence Code BGA84,9X15,32
Clock Frequency-Max (MHz) 400.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 95.0000
Operating Temperature-Min (Cel) -40.0000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, MT47H64M16NF-25E IT:M optimizes energy distribution in electronic devices. Its DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, MT47H64M16NF-25E IT:M ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MT47H64M16NF-25E IT:M in the documentation section.

DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA Tray

MT47H64M16NF-25E-M-TR