ISC027N10NM6ATMA1
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Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R
| Application | SWITCHING |
| JESD-30 Code | R-PDSO-F8 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | FLAT |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 217 |
| Drain Current-Max (ID) (A) | 192 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 100 |
| Feedback Cap-Max (Crss) (pF) | 24 |
| Operating Temperature-Max (Cel) | 175 |
| Operating Temperature-Min (Cel) | -55 |
| Avalanche Energy Rating (Eas) (mJ) | 1057 |
| Pulsed Drain Current-Max (IDM) (A) | 768 |
| Drain-source On Resistance-Max (ohm) | 0.0027 |
| Screening Level / Reference Standard | IEC-61249-2-21 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG ISC027N10NM6ATMA1 in the documentation section.
Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R
As part of the category Semiconductors and subcategory Semiconductors, ISC027N10NM6ATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, ISC027N10NM6ATMA1 ensures stable output voltage even when the load changes. Its Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R makes it a reliable element in multi-level power systems.
