ISC027N10NM6ATMA1 INFINEON TECHNOLOGIES AG

ISC027N10NM6ATMA1 INFINEON TECHNOLOGIES AG
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Semiconductors

Transistors

Lead Time     52 weeks

Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R

Technical Data

Manufacturer infineon technologies ag
MPN ISC027N10NM6ATMA1
Application SWITCHING
JESD-30 Code R-PDSO-F8
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 8.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 217.0000
Drain Current-Max (ID) (A) 192.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 100.0000
Feedback Cap-Max (Crss) (pF) 24.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 1057.0000
Pulsed Drain Current-Max (IDM) (A) 768.0000
Drain-source On Resistance-Max (ohm) 0.0027
Screening Level / Reference Standard IEC-61249-2-21
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, ISC027N10NM6ATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, ISC027N10NM6ATMA1 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for ISC027N10NM6ATMA1 in the documentation section.

Trans MOSFET N-CH 100V 23A 8-Pin TDSON EP T/R

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