DRV5032FBDBZR

Texas Instruments Incorporated

DRV5032FBDBZR

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Lead time

Semiconductors

Magnetic Field Sensors

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Semiconductors

Magnetic Field Sensors

Lead time 9 weeks
Data sheet DRV5032FBDBZR

Low power (5 Hz,

Technical Data
Output (V) PUSH-PULL
Housing PLASTIC
Input Mode UNIPOLAR
Output Type DIGITAL CURRENT
Output Range -5.0-5.0mA
J-STD-609 Code e3
Hysteresis (mT) 1.5
Terminal Finish Matte Tin (Sn)
Body Height (mm) 1.12
Mounting Feature SURFACE MOUNT
Termination Type SOLDER
Body Breadth (mm) 1.3
Number of Terminals 3
Package Shape/Style RECTANGULAR
Package Body Material PLASTIC/EPOXY
Supply Voltage-Max (V) 5.5
Supply Voltage-Min (V) 1.65
Sensors/Transducers Type MAGNETIC FIELD SENSOR,HALL EFFECT
Operating Current-Max (mA) 0.0018
Body Length or Diameter (mm) 2.92
Magnetic Field Range-Max (mT) 3.9
Magnetic Field Range-Min (mT) 0.5
Sensor Output Current-Max (mA) 5
Operating Temperature-Max (Cel) 85
Operating Temperature-Min (Cel) -40

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Frequently Asked Questions

What documentation is available for Texas Instruments Incorporated DRV5032FBDBZR?

You can download the user manual and technical specifications for Texas Instruments Incorporated DRV5032FBDBZR in the documentation section.

What are the key features of Texas Instruments Incorporated DRV5032FBDBZR?

Low power (5 Hz,

How does Texas Instruments Incorporated DRV5032FBDBZR contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, DRV5032FBDBZR optimizes energy distribution in electronic devices. Its Low power (5 Hz, allows minimizing losses and increasing the overall system efficiency.

Why is DRV5032FBDBZR suitable for complex power management systems?

As a component of the subcategory Semiconductors, DRV5032FBDBZR ensures stable output voltage even when the load changes. Its Low power (5 Hz, makes it a reliable element in multi-level power systems.