TPS259830LNRGER
Availability
Design risk
Price trend
Lead time
2.7-V to 26-V, 2.7-mΩ 18-A integrated hot-swap eFuse with current monitor and blocking FET driver 24-VQFN -40 to 125
Width (mm) | 4 |
Length (mm) | 4 |
JESD-30 Code | S-PQCC-N24 |
Package Code | HVQCCN |
Package Shape | SQUARE |
Package Style (Meter) | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
Surface Mount | YES |
Terminal Form | NO LEAD |
J-STD-609 Code | e4 |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
Terminal Position | QUAD |
Number of Channels | 1 |
Number of Functions | 1 |
Number of Terminals | 24 |
Terminal Pitch (mm) | 0.5 |
Adjustable Threshold | YES |
Input Voltage-Max (V) | 26 |
Input Voltage-Min (V) | 2.7 |
Package Body Material | PLASTIC/EPOXY |
Analog IC - Other Type | POWER SUPPLY SUPPORT CIRCUIT |
Output Current-Max (A) | 20 |
Seated Height-Max (mm) | 1 |
Supply Voltage-Max (V) | 26 |
Supply Voltage-Min (V) | 2.7 |
Supply Voltage-Nom (V) | 12 |
Package Equivalence Code | LCC24,.16SQ,20 |
Threshold Voltage-Nom (V) | +2.42V |
Moisture Sensitivity Level | 2 |
Peak Reflow Temperature (Cel) | 260 |
Operating Temperature-Max (Cel) | 125 |
Operating Temperature-Min (Cel) | -40 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Submit request
CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Texas Instruments Incorporated TPS259830LNRGER in the documentation section.
2.7-V to 26-V, 2.7-mΩ 18-A integrated hot-swap eFuse with current monitor and blocking FET driver 24-VQFN -40 to 125
As part of the category Semiconductors and subcategory Semiconductors, TPS259830LNRGER optimizes energy distribution in electronic devices. Its 2.7-V to 26-V, 2.7-mΩ 18-A integrated hot-swap eFuse with current monitor and blocking FET driver 24-VQFN -40 to 125 allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, TPS259830LNRGER ensures stable output voltage even when the load changes. Its 2.7-V to 26-V, 2.7-mΩ 18-A integrated hot-swap eFuse with current monitor and blocking FET driver 24-VQFN -40 to 125 makes it a reliable element in multi-level power systems.