IRF6623TRPBF
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IRF6623 - 12V-300V N-CHANNEL POW
| Application | SWITCHING |
| JESD-30 Code | R-XBCC-N3 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | CHIP CARRIER |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e4 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | SILVER NICKEL |
| DLA Qualification | Not Qualified |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 42 |
| Drain Current-Max (ID) (A) | 16 |
| Moisture Sensitivity Level | 3 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 20 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Avalanche Energy Rating (Eas) (mJ) | 43 |
| Pulsed Drain Current-Max (IDM) (A) | 120 |
| Drain-source On Resistance-Max (ohm) | 0.0057 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for International Rectifier Corporation IRF6623TRPBF in the documentation section.
IRF6623 - 12V-300V N-CHANNEL POW
As part of the category Semiconductors and subcategory Semiconductors, IRF6623TRPBF optimizes energy distribution in electronic devices. Its IRF6623 - 12V-300V N-CHANNEL POW allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, IRF6623TRPBF ensures stable output voltage even when the load changes. Its IRF6623 - 12V-300V N-CHANNEL POW makes it a reliable element in multi-level power systems.
