IPB200N25N3G INFINEON TECHNOLOGIES AG

IPB200N25N3G INFINEON TECHNOLOGIES AG
Availability
Unavailable
IPB200N25N3G Availability: Out of Stock
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
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Semiconductors

Transistors

Datasheet

    Download IPB200N25N3G datasheet IPB200N25N3G

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Technical Data

Manufacturer infineon technologies ag
MPN IPB200N25N3G
Application SWITCHING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 300.0000
Drain Current-Max (ID) (A) 64.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 250.0000
Feedback Cap-Max (Crss) (pF) 4.0000
Peak Reflow Temperature (Cel) 245.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 320.0000
Pulsed Drain Current-Max (IDM) (A) 256.0000
Drain-source On Resistance-Max (ohm) 0.0200
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IPB200N25N3 G optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IPB200N25N3 G ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IPB200N25N3 G in the documentation section.

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IPD90P04P4L-04