SI1902DL-T1-GE3 VISHAY INTERTECHNOLOGY INC

SI1902DL-T1-GE3 VISHAY INTERTECHNOLOGY INC
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Semiconductors

Transistors

Lead Time     8 weeks

MOSFET 2.5v n-channel dual

Technical Data

Manufacturer vishay intertechnology inc
MPN SI1902DL-T1-GE3
JESD-30 Code R-PDSO-G6
Configuration 2 N-Channel (Dual)
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2.0000
Number of Terminals 6.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.2700
Drain Current-Max (ID) (A) 0.6600
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Drain-source On Resistance-Max (ohm) 0.3850
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SI1902DL-T1-GE3 optimizes energy distribution in electronic devices. Its MOSFET 2.5v n-channel dual allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SI1902DL-T1-GE3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SI1902DL-T1-GE3 in the documentation section.

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