SI1902DL-T1-GE3
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MOSFET 2.5v n-channel dual
| JESD-30 Code | R-PDSO-G6 |
| Configuration | 2 N-Channel (Dual) |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Finish | MATTE TIN |
| DLA Qualification | Not Qualified |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 0.27 |
| Drain Current-Max (ID) (A) | 0.66 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 20 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -55 |
| Drain-source On Resistance-Max (ohm) | 0.385 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Vishay Intertechnology, Inc. SI1902DL-T1-GE3 in the documentation section.
MOSFET 2.5v n-channel dual
As part of the category Semiconductors and subcategory Semiconductors, SI1902DL-T1-GE3 optimizes energy distribution in electronic devices. Its MOSFET 2.5v n-channel dual allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, SI1902DL-T1-GE3 ensures stable output voltage even when the load changes. Its MOSFET 2.5v n-channel dual makes it a reliable element in multi-level power systems.
