UT2302G-AE2-R UTC, LTD.

UT2302G-AE2-R UTC, LTD.
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Design risk
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Stable
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Semiconductors

Transistors


Small Signal Field-Effect Transistor, 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Technical Data

Manufacturer utc, ltd.
MPN UT2302G-AE2-R
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-236
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position DUAL
Additional Feature ULTRA-LOW RESISTANCE
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A) 10.0000
Drain-source On Resistance-Max (ohm) 0.0500
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, UT2302G-AE2-R optimizes energy distribution in electronic devices. Its Small Signal Field-Effect Transistor, 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, UT2302G-AE2-R ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for UT2302G-AE2-R in the documentation section.

Small Signal Field-Effect Transistor, 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

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