SKM75GB12V SEMIKRON INTERNATIONAL

SKM75GB12V SEMIKRON INTERNATIONAL
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Semiconductors

Transistors

Lead Time     26 weeks
Data Sheet     Download SKM75GB12V datasheet SKM75GB12V

SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module

Technical Data

Manufacturer semikron international
MPN SKM75GB12V
Application POWER CONTROL
JESD-30 Code R-XUFM-X11
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form UNSPECIFIED
VCEsat-Max (V) 2.3000
Case Connection ISOLATED
DLA Qualification Not Qualified
Terminal Position UPPER
Number of Elements 2.0000
Number of Terminals 11.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Transistor Element Material SILICON
Gate-emitter Voltage-Max (V) 20.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Collector Current-Max (IC) (A) 121.0000
Operating Temperature-Max (Cel) 175.0000
Collector-emitter Voltage-Max (V) 1200.0000
Screening Level / Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SKM75GB12V optimizes energy distribution in electronic devices. Its SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SKM75GB12V ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SKM75GB12V in the documentation section.

SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module

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