SKM75GB12V
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SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module
| VCEsat-Max (V) | 2.3 |
| JESD-30 Code | R-XUFM-X11 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | FLANGE MOUNT |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Case Connection | ISOLATED |
| Terminal Position | UPPER |
| Number of Elements | 2 |
| Reference Standard | UL RECOGNIZED |
| Number of Terminals | 11 |
| Qualification Status | Not Qualified |
| Package Body Material | UNSPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Application | POWER CONTROL |
| Gate-emitter Voltage-Max (V) | 20 |
| Operating Temperature-Max (Cel) | 175 |
| Collector Current-Max (IC) (A) | 121 |
| Transistor Element Material | SILICON |
| Collector-emitter Voltage-Max (V) | 1200 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for SEMIKRON INTERNATIONAL SKM75GB12V in the documentation section.
SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module
As part of the category Semiconductors and subcategory Semiconductors, SKM75GB12V optimizes energy distribution in electronic devices. Its SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, SKM75GB12V ensures stable output voltage even when the load changes. Its SEMIKRON - SKM75GB12V - IGBT Module, Half Bridge, 114 A, 1.2 kV, 175 °C, Module makes it a reliable element in multi-level power systems.
