NE58219-T1-A

Renesas Electronics Corp.

NE58219-T1-A

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Design risk

Price trend

Lead time

Semiconductors

RF Power Field-Effect Transistors

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Semiconductors

RF Power Field-Effect Transistors

Lead time 6 weeks
Data sheet NE58219-T1-A

TRANSISTOR BIPOLAR .9GHZ 3-SMINI

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Technical Data
Configuration SINGLE
Surface Mount YES
Number of Elements 1
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 60
Operating Temperature-Max (Cel) 125
Collector Current-Max (IC) (A) 0.06
Power Dissipation-Max (Abs) (W) 0.1
Transition Frequency-Nom (fT) (MHz) 3000

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CONTACT REASON

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Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

info@sourceability.com

+1-888-952-9225

Frequently Asked Questions

What documentation is available for Renesas Electronics Corp. NE58219-T1-A?

You can download the user manual and technical specifications for Renesas Electronics Corp. NE58219-T1-A in the documentation section.

What are the key features of Renesas Electronics Corp. NE58219-T1-A?

TRANSISTOR BIPOLAR .9GHZ 3-SMINI

How does Renesas Electronics Corp. NE58219-T1-A contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, NE58219-T1-A optimizes energy distribution in electronic devices. Its TRANSISTOR BIPOLAR .9GHZ 3-SMINI allows minimizing losses and increasing the overall system efficiency.

Why is NE58219-T1-A suitable for complex power management systems?

As a component of the subcategory Semiconductors, NE58219-T1-A ensures stable output voltage even when the load changes. Its TRANSISTOR BIPOLAR .9GHZ 3-SMINI makes it a reliable element in multi-level power systems.