NE58219-T1-A RENESAS ELECTRONICS CORP

NE58219-T1-A RENESAS ELECTRONICS CORP
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Semiconductors

Transistors


TRANSISTOR BIPOLAR .9GHZ 3-SMINI

Technical Data

Manufacturer renesas electronics corp
MPN NE58219-T1-A
Configuration SINGLE
Surface Mount YES
Number of Elements 1.0000
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 60.0000
Operating Temperature-Max ( Cel ) 125.0000
Collector Current-Max (IC) ( A ) 0.0600
Power Dissipation-Max (Abs) ( W ) 0.1000
Transition Frequency-Nom (fT) ( MHz ) 3000.0000
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Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, NE58219-T1-A optimizes energy distribution in electronic devices. Its TRANSISTOR BIPOLAR .9GHZ 3-SMINI allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, NE58219-T1-A ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NE58219-T1-A in the documentation section.

TRANSISTOR BIPOLAR .9GHZ 3-SMINI