NTTFS4C13NTAG

ONSEMI

no image
 
NTTFS4C13NTAG

NTTFS4C13NTAG

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time

15 results found
TOP244YN
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0430450600
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
TXS0108EPWR
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
WR06X104JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
WR06X330JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
FM25W256-GTR
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
HIH-4000-002
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
TPS73733DCQR
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
WR06X9310FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
WR12X1543FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
TPS7A9401DSCR
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
0603N470J500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0805S226M100CT
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
SDSDQAF3-008G-I
Available
Available
High
High
Increasing
Increasing
Stable
Stable
ADM2582EBRWZ-RE...
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable

Semiconductors

Transistors

Lead Time     37 weeks

Trans MOSFET N-CH 30V 11.7A 8-Pin WDFN EP T/R

Technical Data

Manufacturer onsemi
MPN NTTFS4C13NTAG
Application SWITCHING
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 5.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 21.5000
Drain Current-Max (ID) (A) 7.2000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Drain-source On Resistance-Max (ohm) 0.0094
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, NTTFS4C13NTAG optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 30V 11.7A 8-Pin WDFN EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, NTTFS4C13NTAG ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NTTFS4C13NTAG in the documentation section.

Trans MOSFET N-CH 30V 11.7A 8-Pin WDFN EP T/R

SBCP53-16T1G