NVH4L022N120M3S ONSEMI

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Semiconductors

Transistors

Lead Time     9 weeks
Data Sheet     Download NVH4L022N120M3S datasheet NVH4L022N120M3S

Trans MOSFET N-CH SiC 1.2KV 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101

Technical Data

Manufacturer onsemi
MPN NVH4L022N120M3S
Application SWITCHING
JESD-30 Code R-PSFM-T4
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 352.0000
Drain Current-Max (ID) (A) 68.0000
Transistor Element Material SILICON CARBIDE
DS Breakdown Voltage-Min (V) 1200.0000
Feedback Cap-Max (Crss) (pF) 12.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 267.0000
Pulsed Drain Current-Max (IDM) (A) 246.0000
Drain-source On Resistance-Max (ohm) 0.0300
Screening Level / Reference Standard AEC-Q101
Availability In stock

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9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

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Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, NVH4L022N120M3S optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH SiC 1.2KV 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, NVH4L022N120M3S ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NVH4L022N120M3S in the documentation section.

Trans MOSFET N-CH SiC 1.2KV 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101

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