NVH4L022N120M3S

ONSEMI

no image
 
NVH4L022N120M3S

NVH4L022N120M3S

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Stable
Price trend
Lead time
Decreasing
Lead time
15 results found
BAS70
Unavailable
Unavailable
Low
Low
Stable
Stable
Increasing
Increasing
SMD185F-2
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
0454005.MR
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
0475500001
Available
Available
High
High
Stable
Stable
Stable
Stable
AUIRFR6215
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
BC850CLT1G
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
LNJ047X8ARA
Available
Available
High
High
Stable
Stable
Stable
Stable
CR10-1003-FK
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
CR32-3300-FL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
WR06X4701FGL
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
0603B223K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
LT8609AEMSE#TRP...
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Increasing
Increasing
EPM7128AETC100-...
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
XC7A200T-2FFG11...
Available
Available
High
High
Stable
Stable
Stable
Stable
TCC0603X7R104K5...
Available
Available
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     6 weeks
Data Sheet     Download NVH4L022N120M3S datasheet NVH4L022N120M3S

Trans MOSFET N-CH SiC 1.2KV 89A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101

Technical Data

Manufacturer ONSEMI
MPN NVH4L022N120M3S
Application SWITCHING
JESD-30 Code R-PSFM-T4
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 352.0000
Drain Current-Max (ID) (A) 68.0000
Transistor Element Material SILICON CARBIDE
DS Breakdown Voltage-Min (V) 1200.0000
Feedback Cap-Max (Crss) (pF) 12.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 267.0000
Pulsed Drain Current-Max (IDM) (A) 246.0000
Drain-source On Resistance-Max (ohm) 0.0300
Screening Level / Reference Standard AEC-Q101
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, NVH4L022N120M3S optimizes energy distribution in electronic devices. Its This component allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, NVH4L022N120M3S ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for NVH4L022N120M3S in the documentation section.

This component