PDTB113ZT,215
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PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
| Application | SWITCHING |
| JESD-30 Code | R-PDSO-G3 |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| JEDEC-95 Code | TO-236AB |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| J-STD-609 Code | e3 |
| Terminal Finish | TIN |
| Terminal Position | DUAL |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | PNP |
| DC Current Gain-Min (hFE) | 70 |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Peak Reflow Temperature (Cel) | 260 |
| Collector Current-Max (IC) (A) | 0.5 |
| Collector-emitter Voltage-Max (V) | 50 |
| Screening Level / Reference Standard | IEC-60134 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Nexperia BV PDTB113ZT,215 in the documentation section.
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
As part of the category Semiconductors and subcategory Semiconductors, PDTB113ZT,215 optimizes energy distribution in electronic devices. Its PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, PDTB113ZT,215 ensures stable output voltage even when the load changes. Its PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ makes it a reliable element in multi-level power systems.
