TD215N22KOF
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Silicon Controlled Rectifier, 410A I(T)RMS, 215A I(T), 2200V V(DRM), 2200V V(RRM), 1 Element
JESD-30 Code | R-XUFM-X5 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Package Shape | RECTANGULAR |
Package Style (Meter) | FLANGE MOUNT |
Surface Mount | NO |
Terminal Form | UNSPECIFIED |
Case Connection | ISOLATED |
DLA Qualification | Not Qualified |
Terminal Position | UPPER |
Number of Elements | 1 |
Number of Terminals | 5 |
Trigger Device Type | SCR |
Package Body Material | UNSPECIFIED |
Desc. of Quick-Connects | G-GR |
Desc. of Screw Terminals | A-K-AK |
Holding Current-Max (mA) | 300 |
Leakage Current-Max (mA) | 50 |
On-state Current-Max (A) | 215 |
RMS On-state Current-Max (A) | 410 |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
DC Gate Trigger Voltage-Max (V) | 2 |
Operating Temperature-Max (Cel) | 125 |
Operating Temperature-Min (Cel) | -40 |
DC Gate Trigger Current-Max (mA) | 200 |
Non-Repetitive Pk On-state Cur (A) | 6300 |
Repetitive Peak Reverse Voltage (V) | 2200 |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Repetitive Peak Off-state Voltage (V) | 2200 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG TD215N22KOF in the documentation section.
Silicon Controlled Rectifier, 410A I(T)RMS, 215A I(T), 2200V V(DRM), 2200V V(RRM), 1 Element
As part of the category Semiconductors and subcategory Semiconductors, TD215N22KOF optimizes energy distribution in electronic devices. Its Silicon Controlled Rectifier, 410A I(T)RMS, 215A I(T), 2200V V(DRM), 2200V V(RRM), 1 Element allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, TD215N22KOF ensures stable output voltage even when the load changes. Its Silicon Controlled Rectifier, 410A I(T)RMS, 215A I(T), 2200V V(DRM), 2200V V(RRM), 1 Element makes it a reliable element in multi-level power systems.