IPL60R075CFD7

INFINEON TECHNOLOGIES AG

IPL60R075CFD7
 
IPL60R075CFD7

IPL60R075CFD7

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
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Semiconductors

Transistors

Data Sheet     Download IPL60R075CFD7 datasheet IPL60R075CFD7

MOSFET HIGH POWER_NEW

Technical Data

Manufacturer INFINEON TECHNOLOGIES AG
MPN IPL60R075CFD7
Application SWITCHING
JESD-30 Code S-PSSO-N4
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape SQUARE
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 4.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 189.0000
Drain Current-Max (ID) (A) 33.0000
Moisture Sensitivity Level 2A
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 600.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -40.0000
Avalanche Energy Rating (Eas) (mJ) 151.0000
Pulsed Drain Current-Max (IDM) (A) 129.0000
Drain-source On Resistance-Max (ohm) 0.0750
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IPL60R075CFD7 optimizes energy distribution in electronic devices. Its MOSFET HIGH POWER_NEW allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IPL60R075CFD7 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IPL60R075CFD7 in the documentation section.

MOSFET HIGH POWER_NEW