IPL60R075CFD7
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MOSFET HIGH POWER_NEW
| Application | SWITCHING |
| JESD-30 Code | S-PSSO-N4 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | SQUARE |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | Tin (Sn) |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (W) | 189 |
| Drain Current-Max (ID) (A) | 33 |
| Moisture Sensitivity Level | 2A |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 600 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Operating Temperature-Max (Cel) | 150 |
| Operating Temperature-Min (Cel) | -40 |
| Avalanche Energy Rating (Eas) (mJ) | 151 |
| Pulsed Drain Current-Max (IDM) (A) | 129 |
| Drain-source On Resistance-Max (ohm) | 0.075 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG IPL60R075CFD7 in the documentation section.
MOSFET HIGH POWER_NEW
As part of the category Semiconductors and subcategory Semiconductors, IPL60R075CFD7 optimizes energy distribution in electronic devices. Its MOSFET HIGH POWER_NEW allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, IPL60R075CFD7 ensures stable output voltage even when the load changes. Its MOSFET HIGH POWER_NEW makes it a reliable element in multi-level power systems.
