IPD80R1K2P7ATMA1
Availability
Design risk
Price trend
Lead time
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R
| Application | SWITCHING |
| JESD-30 Code | R-PSSO-G2 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code | TO-252AA |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Finish | Tin (Sn) |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 800 |
| Operating Temperature-Min (Cel) | -55 |
| Avalanche Energy Rating (Eas) (mJ) | 10 |
| Pulsed Drain Current-Max (IDM) (A) | 11 |
| Drain-source On Resistance-Max (ohm) | 1.2 |
Submit request
CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for INFINEON TECHNOLOGIES AG IPD80R1K2P7ATMA1 in the documentation section.
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R
As part of the category Semiconductors and subcategory Semiconductors, IPD80R1K2P7ATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, IPD80R1K2P7ATMA1 ensures stable output voltage even when the load changes. Its Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R makes it a reliable element in multi-level power systems.
