IPD80R1K2P7ATMA1

INFINEON TECHNOLOGIES AG

IPD80R1K2P7ATMA1
 
IPD80R1K2P7ATMA1

IPD80R1K2P7ATMA1

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Increasing
Price trend
Lead time
Increasing
Lead time

15 results found
52610-2633
Available
Available
High
High
Stable
Stable
Stable
Stable
J00-0045NL
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
NTJD4152PT1G
Available
Available
Low
Low
Stable
Stable
Increasing
Increasing
AD603ARZ-REEL
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
AD694ARZ-REEL
Available
Available
High
High
Stable
Stable
Decreasing
Decreasing
ADV7842KBCZ-5
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
NCP51145MNTAG
Available
Available
High
High
Stable
Stable
Stable
Stable
0402B102K500CT
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
1206N101J102CT
Available
Available
Medium
Medium
Decreasing
Decreasing
Increasing
Increasing
RMC1/16-271JTP
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
CL10A106MO8NQNC
Unavailable
Unavailable
High
High
Stable
Stable
Increasing
Increasing
LT8390EFE#TRPBF
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
IS42S16800F-7BL...
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
TCC0402X7R103K2...
Available
Available
High
High
Stable
Stable
Stable
Stable
EFR32BG12P433F1...
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable

Semiconductors

Transistors

Lead Time     26 weeks
Data Sheet     Download IPD80R1K2P7ATMA1 datasheet IPD80R1K2P7ATMA1

Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R

Technical Data

Manufacturer infineon technologies ag
MPN IPD80R1K2P7ATMA1
Application SWITCHING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-252AA
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 800.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 10.0000
Pulsed Drain Current-Max (IDM) (A) 11.0000
Drain-source On Resistance-Max (ohm) 1.2000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IPD80R1K2P7ATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IPD80R1K2P7ATMA1 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IPD80R1K2P7ATMA1 in the documentation section.

Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R

IPB200N25N3-G