IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES AG

IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES AG
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IPD80R1K2P7ATMA1 Availability: In Stock
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Semiconductors

Transistors

Lead Time     16 weeks

Datasheet

    Download IPD80R1K2P7ATMA1 datasheet IPD80R1K2P7ATMA1

Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R

Technical Data

Manufacturer infineon technologies ag
MPN IPD80R1K2P7ATMA1
Application SWITCHING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-252AA
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 2.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 800.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 10.0000
Pulsed Drain Current-Max (IDM) (A) 11.0000
Drain-source On Resistance-Max (ohm) 1.2000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IPD80R1K2P7ATMA1 optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IPD80R1K2P7ATMA1 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IPD80R1K2P7ATMA1 in the documentation section.

Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) DPAK T/R

IPB200N25N3-G