PJQ4463AP_R2_00001 PANJIT INTERNATIONAL INC

PJQ4463AP_R2_00001 PANJIT INTERNATIONAL INC
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Semiconductors

Transistors

Lead Time     23 weeks
Data Sheet     Download PJQ4463AP_R2_00001 datasheet PJQ4463AP_R2_00001

MOSFETs dfn3333 p chan 60v

Technical Data

Manufacturer panjit international inc
MPN PJQ4463AP_R2_00001
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position DUAL
Additional Feature ULTRA LOW RESISTANCE
Number of Elements 1.0000
Number of Terminals 5.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Drain Current-Max (ID) (A) 4.2000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) (A) 16.8000
Drain-source On Resistance-Max (ohm) 0.0680
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, PJQ4463AP_R2_00001 optimizes energy distribution in electronic devices. Its MOSFETs dfn3333 p chan 60v allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, PJQ4463AP_R2_00001 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for PJQ4463AP_R2_00001 in the documentation section.

MOSFETs dfn3333 p chan 60v

SS1060VHEWS-R2-00001