PJQ4463AP_R2_00001
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MOSFETs dfn3333 p chan 60v
| JESD-30 Code | R-PDSO-F5 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | FLAT |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Terminal Position | DUAL |
| Additional Feature | ULTRA LOW RESISTANCE |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | P-CHANNEL |
| Drain Current-Max (ID) (A) | 4.2 |
| Transistor Element Material | SILICON |
| DS Breakdown Voltage-Min (V) | 60 |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Pulsed Drain Current-Max (IDM) (A) | 16.8 |
| Drain-source On Resistance-Max (ohm) | 0.068 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for PANJIT International Inc. PJQ4463AP_R2_00001 in the documentation section.
MOSFETs dfn3333 p chan 60v
As part of the category Semiconductors and subcategory Semiconductors, PJQ4463AP_R2_00001 optimizes energy distribution in electronic devices. Its MOSFETs dfn3333 p chan 60v allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, PJQ4463AP_R2_00001 ensures stable output voltage even when the load changes. Its MOSFETs dfn3333 p chan 60v makes it a reliable element in multi-level power systems.
