Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Sourceability North America, LLC
9715 Burnet Rd, Ste 200 Austin, TX 78758-5215As part of the category Semiconductors and subcategory Transistors, MMFTP3160 optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Transistors, MMFTP3160 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.
You can download the user manual and technical specifications for MMFTP3160 in the documentation section.
Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236