MMFTP3160 DIOTEC SEMICONDUCTOR AG

MMFTP3160 DIOTEC SEMICONDUCTOR AG
Availability
Available
MMFTP3160 Availability: In Stock
Design risk
High
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time
15 results found
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WR08X2001FGL Availability: In Stock
Available
High
High
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Low
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Low
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Low
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Low
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DP83848IVVX/NOP...
DP83848IVVX/NOPB Availability: Out of Stock
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Stable
XC6SLX9-2TQG144...
XC6SLX9-2TQG144I Availability: Out of Stock
Constrained
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XC7A35T-2CSG324I Availability: In Stock
Available
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LTC3538EDCB#TRPBF Availability: Out of Stock
Constrained
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GCM155C71A105KE38D Availability: Out of Stock
Unavailable
Low
Low
Decreasing
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Stable
Stable

Semiconductors

Transistors

Lead Time     8 weeks

Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Technical Data

Manufacturer diotec semiconductor ag
MPN MMFTP3160
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-236
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 1.4000
Drain Current-Max (ID) (A) 2.6000
Transistor Element Material SILICON
Turn-on Time-Max (ton) (ns) 20.6000
DS Breakdown Voltage-Min (V) 30.0000
Feedback Cap-Max (Crss) (pF) 40.0000
Peak Reflow Temperature (Cel) 260.0000
Turn-off Time-Max (toff) (ns) 12.4000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Power Dissipation Ambient-Max (W) 1.4000
Pulsed Drain Current-Max (IDM) (A) 20.0000
Drain-source On Resistance-Max (ohm) 0.0900
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, MMFTP3160 optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, MMFTP3160 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MMFTP3160 in the documentation section.

Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

DHA-08TQR