MMFTP3160

DIOTEC SEMICONDUCTOR AG

no image
 
MMFTP3160

MMFTP3160

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time

15 results found
2002411215
Available
Available
Medium
Medium
Decreasing
Decreasing
Decreasing
Decreasing
MAX488ECSA+T
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Increasing
Increasing
RB520S30,115
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
WR06X82R0FGL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
NINA-W106-00B
Available
Available
Low
Low
Stable
Stable
Increasing
Increasing
1206N271J201CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
2220B106M101CT
Available
Available
High
High
Stable
Stable
Stable
Stable
LM61460AANRJRR
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
SI2324DS-T1-GE3
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
AD5664ARMZ-REEL...
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
D38999/20MJ35PN...
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
TCSOPL0J476M8R-...
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
LT1963AEST-1.8#...
Unavailable
Unavailable
High
High
Stable
Stable
Stable
Stable
LTC3204BEDC-5#T...
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
ILCX07-FF5F18-2...
Available
Available
High
High
Stable
Stable
Increasing
Increasing

Semiconductors

Transistors

Lead Time     8 weeks

Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Technical Data

Manufacturer diotec semiconductor ag
MPN MMFTP3160
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-236
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 1.4000
Drain Current-Max (ID) (A) 2.6000
Transistor Element Material SILICON
Turn-on Time-Max (ton) (ns) 20.6000
DS Breakdown Voltage-Min (V) 30.0000
Feedback Cap-Max (Crss) (pF) 40.0000
Peak Reflow Temperature (Cel) 260.0000
Turn-off Time-Max (toff) (ns) 12.4000
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Power Dissipation Ambient-Max (W) 1.4000
Pulsed Drain Current-Max (IDM) (A) 20.0000
Drain-source On Resistance-Max (ohm) 0.0900
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, MMFTP3160 optimizes energy distribution in electronic devices. Its Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, MMFTP3160 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MMFTP3160 in the documentation section.

Power Field-Effect Transistor, 2.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

DHA-08TQR