CY7C1061GE30-10BV1XI
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Standard SRAM, 1MX16, 10ns, CMOS, PBGA48
| Width (mm) | 6 |
| Length (mm) | 8 |
| Technology | CMOS |
| JESD-30 Code | R-PBGA-B48 |
| Memory Width | 16 |
| Organization | 1MX16 |
| Package Code | VFBGA |
| JESD-609 Code | e1 |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | BALL |
| Memory Density (bit) | 16777216 |
| Memory IC Type | STANDARD SRAM |
| Operating Mode | ASYNCHRONOUS |
| Terminal Pitch (mm) | 0.75 |
| Access Time-Max (ns) | 10 |
| Number of Words (words) | 1048576 |
| Parallel/Serial | PARALLEL |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Seated Height-Max (mm) | 1 |
| Temperature Grade | INDUSTRIAL |
| Terminal Position | BOTTOM |
| Number of Functions | 1 |
| Number of Terminals | 48 |
| Number of Words Code | 1M |
| Package Body Material | PLASTIC/EPOXY |
| Operating Temperature-Max (Cel) | 85 |
| Operating Temperature-Min (Cel) | -40 |
| Supply Voltage-Max (Vsup) (V) | 3.6 |
| Supply Voltage-Min (Vsup) (V) | 2.2 |
| Supply Voltage-Nom (Vsup) (V) | 3 |
| Moisture Sensitivity Level | 3 |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Cypress Semiconductor Corporation CY7C1061GE30-10BV1XI in the documentation section.
Standard SRAM, 1MX16, 10ns, CMOS, PBGA48
As part of the category Semiconductors and subcategory Semiconductors, CY7C1061GE30-10BV1XI optimizes energy distribution in electronic devices. Its Standard SRAM, 1MX16, 10ns, CMOS, PBGA48 allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, CY7C1061GE30-10BV1XI ensures stable output voltage even when the load changes. Its Standard SRAM, 1MX16, 10ns, CMOS, PBGA48 makes it a reliable element in multi-level power systems.
