CY7C1041GN30-10ZSXIT

CYPRESS SEMICONDUCTOR CORP

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CY7C1041GN30-10ZSXIT

CY7C1041GN30-10ZSXIT

Availability
Unavailable
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time

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Semiconductors

SRAMs

Lead Time     2 weeks
Data Sheet     Download CY7C1041GN30-10ZSXIT datasheet CY7C1041GN30-10ZSXIT

4-Mbit static RAM, CY7C1041GN30-10ZSXIT, Cypress CY7C1041GN30-10ZSXIT is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and write enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. Features High speed Low active and standby currents TTL-compatible inputs and outputs 1.0-V data retention

Technical Data

Manufacturer cypress semiconductor corp
MPN CY7C1041GN30-10ZSXIT
I/O Type COMMON
Technology CMOS
Width (mm) 10.1600
Length (mm) 18.4150
JESD-30 Code R-PDSO-G44
Memory Width 16.0000
Package Code TSOP2
Output Enable YES
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE, THIN PROFILE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
Memory IC Type STANDARD SRAM
Operating Mode ASYNCHRONOUS
Number of Ports 1.0000
Parallel/Serial PARALLEL
Terminal Finish MATTE TIN
Temperature Grade INDUSTRIAL
Terminal Position DUAL
Memory Organization 256KX16
Number of Functions 1.0000
Number of Terminals 44.0000
Terminal Pitch (mm) 0.8000
Access Time-Max (ns) 10.0000
Number of Words Code 256K
Memory Density (bits) 4194304.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.1940
Supply Voltage-Max (V) 3.6000
Supply Voltage-Min (V) 2.2000
Supply Voltage-Nom (V) 3.0000
Number of Words (words) 262144.0000
Standby Current-Max (A) 0.0080
Standby Voltage-Min (V) 1.0000
Supply Current-Max (mA) 45.0000
Package Equivalence Code TSOP44,.46,32
Moisture Sensitivity Level 3.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 85.0000
Operating Temperature-Min (Cel) -40.0000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory SRAMs, CY7C1041GN30-10ZSXIT optimizes energy distribution in electronic devices. Its 4-Mbit static RAM, CY7C1041GN30-10ZSXIT, Cypress CY7C1041GN30-10ZSXIT is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and write enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. Features High speed Low active and standby currents TTL-compatible inputs and outputs 1.0-V data retention allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory SRAMs, CY7C1041GN30-10ZSXIT ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for CY7C1041GN30-10ZSXIT in the documentation section.

4-Mbit static RAM, CY7C1041GN30-10ZSXIT, Cypress CY7C1041GN30-10ZSXIT is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and write enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. Features High speed Low active and standby currents TTL-compatible inputs and outputs 1.0-V data retention

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