CY7C1041GN30-10ZSXIT
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4-Mbit static RAM, CY7C1041GN30-10ZSXIT, Cypress CY7C1041GN30-10ZSXIT is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and write enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. Features High speed Low active and standby currents TTL-compatible inputs and outputs 1.0-V data retention
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 10.16 |
| Length (mm) | 18.415 |
| JESD-30 Code | R-PDSO-G44 |
| Memory Width | 16 |
| Package Code | TSOP2 |
| Output Enable | YES |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE, THIN PROFILE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| J-STD-609 Code | e3 |
| Memory IC Type | STANDARD SRAM |
| Operating Mode | ASYNCHRONOUS |
| Number of Ports | 1 |
| Parallel/Serial | PARALLEL |
| Terminal Finish | MATTE TIN |
| Temperature Grade | INDUSTRIAL |
| Terminal Position | DUAL |
| Memory Organization | 256KX16 |
| Number of Functions | 1 |
| Number of Terminals | 44 |
| Terminal Pitch (mm) | 0.8 |
| Access Time-Max (ns) | 10 |
| Number of Words Code | 256K |
| Memory Density (bits) | 4194304 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1.194 |
| Supply Voltage-Max (V) | 3.6 |
| Supply Voltage-Min (V) | 2.2 |
| Supply Voltage-Nom (V) | 3 |
| Number of Words (words) | 262144 |
| Standby Current-Max (A) | 0.008 |
| Standby Voltage-Min (V) | 1 |
| Supply Current-Max (mA) | 45 |
| Package Equivalence Code | TSOP44,.46,32 |
| Moisture Sensitivity Level | 3 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 85 |
| Operating Temperature-Min (Cel) | -40 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Cypress Semiconductor Corporation CY7C1041GN30-10ZSXIT in the documentation section.
4-Mbit static RAM, CY7C1041GN30-10ZSXIT, Cypress CY7C1041GN30-10ZSXIT is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and write enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. Features High speed Low active and standby currents TTL-compatible inputs and outputs 1.0-V data retention
As part of the category Semiconductors and subcategory Semiconductors, CY7C1041GN30-10ZSXIT optimizes energy distribution in electronic devices. Its 4-Mbit static RAM, CY7C1041GN30-10ZSXIT, Cypress CY7C1041GN30-10ZSXIT is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and write enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. Features High speed Low active and standby currents TTL-compatible inputs and outputs 1.0-V data retention allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, CY7C1041GN30-10ZSXIT ensures stable output voltage even when the load changes. Its 4-Mbit static RAM, CY7C1041GN30-10ZSXIT, Cypress CY7C1041GN30-10ZSXIT is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the Chip Enable (CE) and write enable (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. Features High speed Low active and standby currents TTL-compatible inputs and outputs 1.0-V data retention makes it a reliable element in multi-level power systems.
