AOSS21319C
Availability
Design risk
Price trend
Lead time
P-Channel MOSFET
Application | SWITCHING |
JESD-30 Code | R-PDSO-G3 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Package Shape | RECTANGULAR |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | GULL WING |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Terminal Position | DUAL |
Number of Elements | 1 |
Number of Terminals | 3 |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | P-CHANNEL |
Drain Current-Max (ID) (A) | 2.8 |
Transistor Element Material | SILICON |
DS Breakdown Voltage-Min (V) | 30 |
Feedback Cap-Max (Crss) (pF) | 35 |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Operating Temperature-Max (Cel) | 150 |
Operating Temperature-Min (Cel) | -55 |
Drain-source On Resistance-Max (ohm) | 0.1 |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Submit request
CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Alpha and Omega Semiconductor AOSS21319C in the documentation section.
P-Channel MOSFET
As part of the category Semiconductors and subcategory Semiconductors, AOSS21319C optimizes energy distribution in electronic devices. Its P-Channel MOSFET allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, AOSS21319C ensures stable output voltage even when the load changes. Its P-Channel MOSFET makes it a reliable element in multi-level power systems.