AOSS21319C

ALPHA & OMEGA SEMICONDUCTOR LT...

no image
 
AOSS21319C

AOSS21319C

Availability
Available
Availability
Design risk
Medium
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time

15 results found
87631-3
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
KLKD001.H
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
NB4L52MNG
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
BAS521,115
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
MBR0520LT1G
Unavailable
Unavailable
Low
Low
Stable
Stable
Increasing
Increasing
TPS74801DRCR
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
TPS7A8001DRBR
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Decreasing
Decreasing
0402N3R9B500CT
Constrained
Constrained
Low
Low
Stable
Stable
Decreasing
Decreasing
0805B475K160CT
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
AM26LV32EIRGYR
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
DRP024V060W1BN
Available
Available
Low
Low
Stable
Stable
Increasing
Increasing
CL05B102KB5NNNC
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Increasing
Increasing
RC1206FR-0718RL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Increasing
Increasing
CY7C68013A-128A...
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Increasing
Increasing
LT3756EUD-2#TRP...
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable

Semiconductors

Transistors

Lead Time     16 weeks
Data Sheet     Download AOSS21319C datasheet AOSS21319C

P-Channel MOSFET

Technical Data

Manufacturer alpha & omega semiconductor ltd
MPN AOSS21319C
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Drain Current-Max (ID) (A) 2.8000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30.0000
Feedback Cap-Max (Crss) (pF) 35.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 150.0000
Operating Temperature-Min (Cel) -55.0000
Drain-source On Resistance-Max (ohm) 0.1000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, AOSS21319C optimizes energy distribution in electronic devices. Its P-Channel MOSFET allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, AOSS21319C ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for AOSS21319C in the documentation section.

P-Channel MOSFET