CMBT5401
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Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon
JESD-30 Code | R-PDSO-G3 |
Configuration | SINGLE |
Package Shape | RECTANGULAR |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | GULL WING |
J-STD-609 Code | e0 |
Terminal Finish | TIN LEAD |
DLA Qualification | Not Qualified |
Terminal Position | DUAL |
Number of Elements | 1 |
Number of Terminals | 3 |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | PNP |
DC Current Gain-Min (hFE) | 50 |
Power Dissipation-Max (W) | 0.25 |
Transistor Element Material | SILICON |
Collector Current-Max (IC) (A) | 0.5 |
Operating Temperature-Max (Cel) | 150 |
Collector-emitter Voltage-Max (V) | 150 |
Transition Frequency-Nom (fT) (MHz) | 100 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for CONTINENTAL DEVICE INDIA LTD CMBT5401 in the documentation section.
Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon
As part of the category Semiconductors and subcategory Semiconductors, CMBT5401 optimizes energy distribution in electronic devices. Its Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, CMBT5401 ensures stable output voltage even when the load changes. Its Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon makes it a reliable element in multi-level power systems.