SUP60020E-GE3

VISHAY INTERTECHNOLOGY INC

SUP60020E-GE3
 
SUP60020E-GE3

SUP60020E-GE3

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Decreasing
Lead time

15 results found
5P-SCN
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
VS1053B-L
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
ULN2003ADR
Available
Available
Low
Low
Stable
Stable
Increasing
Increasing
WR04X472JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
REF3425IDBVR
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
SP3051-04HTG
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
TAS5756MDCAR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
TPS70933DRVR
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
TUSB8042RGCR
Constrained
Constrained
Medium
Medium
Stable
Stable
Stable
Stable
WR08X8872FTL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
10114761-101LF
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
LQH31CN2R2M03L
Available
Available
High
High
Decreasing
Decreasing
Increasing
Increasing
MAX14819AATM+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
AD8544ARUZ-REEL
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
CL10A476MQ8QRNC
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing

Semiconductors

Transistors

Lead Time     28 weeks
Data Sheet     Download SUP60020E-GE3 datasheet SUP60020E-GE3

MOSFET N-CH 80V 150A TO220AB

Technical Data

Manufacturer vishay intertechnology inc
MPN SUP60020E-GE3
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 150.0000
Transistor Element Material SILICON
Turn-on Time-Max (ton) (ns) 86.0000
DS Breakdown Voltage-Min (V) 80.0000
Feedback Cap-Max (Crss) (pF) 50.0000
Turn-off Time-Max (toff) (ns) 130.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 180.0000
Pulsed Drain Current-Max (IDM) (A) 500.0000
Drain-source On Resistance-Max (ohm) 0.0024
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SUP60020E-GE3 optimizes energy distribution in electronic devices. Its MOSFET N-CH 80V 150A TO220AB allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SUP60020E-GE3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SUP60020E-GE3 in the documentation section.

MOSFET N-CH 80V 150A TO220AB