SUP60020E-GE3

VISHAY INTERTECHNOLOGY INC

SUP60020E-GE3
 
SUP60020E-GE3

SUP60020E-GE3

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Semiconductors

Transistors

Lead Time     26 weeks
Data Sheet     Download SUP60020E-GE3 datasheet SUP60020E-GE3

MOSFET N-CH 80V 150A TO220AB

Technical Data

Manufacturer VISHAY INTERTECHNOLOGY INC
MPN SUP60020E-GE3
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) (A) 150.0000
Transistor Element Material SILICON
Turn-on Time-Max (ton) (ns) 86.0000
DS Breakdown Voltage-Min (V) 80.0000
Feedback Cap-Max (Crss) (pF) 50.0000
Turn-off Time-Max (toff) (ns) 130.0000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 180.0000
Pulsed Drain Current-Max (IDM) (A) 500.0000
Drain-source On Resistance-Max (ohm) 0.0024
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SUP60020E-GE3 optimizes energy distribution in electronic devices. Its MOSFET N-CH 80V 150A TO220AB allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SUP60020E-GE3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SUP60020E-GE3 in the documentation section.

MOSFET N-CH 80V 150A TO220AB

SSA34-E3-61T