SUP60020E-GE3
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MOSFET N-CH 80V 150A TO220AB
| Application | SWITCHING |
| JESD-30 Code | R-PSFM-T3 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code | TO-220AB |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | FLANGE MOUNT |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode | ENHANCEMENT MODE |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (ID) (A) | 150 |
| Transistor Element Material | SILICON |
| Turn-on Time-Max (ton) (ns) | 86 |
| DS Breakdown Voltage-Min (V) | 80 |
| Feedback Cap-Max (Crss) (pF) | 50 |
| Turn-off Time-Max (toff) (ns) | 130 |
| Operating Temperature-Max (Cel) | 175 |
| Operating Temperature-Min (Cel) | -55 |
| Avalanche Energy Rating (Eas) (mJ) | 180 |
| Pulsed Drain Current-Max (IDM) (A) | 500 |
| Drain-source On Resistance-Max (ohm) | 0.0024 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Vishay Intertechnology, Inc. SUP60020E-GE3 in the documentation section.
MOSFET N-CH 80V 150A TO220AB
As part of the category Semiconductors and subcategory Semiconductors, SUP60020E-GE3 optimizes energy distribution in electronic devices. Its MOSFET N-CH 80V 150A TO220AB allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, SUP60020E-GE3 ensures stable output voltage even when the load changes. Its MOSFET N-CH 80V 150A TO220AB makes it a reliable element in multi-level power systems.
