SI7997DP-T1-GE3

Vishay Intertechnology, Inc.

SI7997DP-T1-GE3

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

15 results found

Availability

Design risk

Price trend

Lead time

Constrained
Low
Decrease
Decrease
RASH712X (SWITCHCRAFTINC)
View Details
Available
Low
Increase
Stable
OPA1678IDR (TEXASINSTRUMENTSINC)
View Details
Unavailable
Low
Stable
Stable
TCA9517DGKR (TEXASINSTRUMENTSINC)
View Details
Unavailable
Medium
Stable
Stable
WR06X102JGL (WALSINTECHNOLOGYCORP)
View Details
Unavailable
Low
Increase
Stable
ADS7828E/2K5 (TEXASINSTRUMENTSINC)
View Details
Unavailable
Low
Increase
Stable
TLV2371IDBVR (TEXASINSTRUMENTSINC)
View Details
Available
High
Stable
Stable
LRB520S-30T1G (LESHANRADIOCOLTD)
View Details
Constrained
Low
Increase
Stable
MSP430F1232IPWR (TEXASINSTRUMENTSINC)
View Details
Unavailable
Low
Decrease
Decrease
RC2512JK-0713RL (YAGEOCORP)
View Details
Constrained
Low
Decrease
Stable
DF50-30DP-1V(52) (HIROSEELECTRICCOLTD)
View Details
Constrained
Low
Increase
Decrease
LTC4217CFE#TRPBF (ANALOGDEVICESINC)
View Details
Unavailable
Low
Increase
Stable
LTC2054HVIS5#TRPBF (ANALOGDEVICESINC)
View Details
Available
High
Decrease
Increase
PJQ4463AP_R2_00001 (PANJITINTERNATIONALINC)
View Details
Available
Low
Increase
Stable
AS4C256M16D3C-12BIN (ALLIANCEMEMORYINC)
View Details
Available
High
Stable
Stable
CY7C1061GE30-10BV1XI (CYPRESSSEMICONDUCTORCORP)
View Details

Semiconductors

Small Signal Field-Effect Transistors

Lead time 9 weeks

Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R

Technical Data
JESD-30 Code R-XDSO-C5
Configuration 2 P-Channel (Dual)
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form C BEND
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2
Number of Terminals 5
Package Body Material UNSPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 46
Drain Current-Max (ID) (A) 60
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Avalanche Energy Rating (Eas) (mJ) 45
Pulsed Drain Current-Max (IDM) (A) 100
Drain-source On Resistance-Max (ohm) 0.0078
Time@Peak Reflow Temperature-Max (s) 40

Submit request

CONTACT REASON

Connect with us

Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Vishay Intertechnology, Inc. SI7997DP-T1-GE3?

You can download the user manual and technical specifications for Vishay Intertechnology, Inc. SI7997DP-T1-GE3 in the documentation section.

What are the key features of Vishay Intertechnology, Inc. SI7997DP-T1-GE3?

Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R

How does Vishay Intertechnology, Inc. SI7997DP-T1-GE3 contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, SI7997DP-T1-GE3 optimizes energy distribution in electronic devices. Its Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R allows minimizing losses and increasing the overall system efficiency.

Why is SI7997DP-T1-GE3 suitable for complex power management systems?

As a component of the subcategory Semiconductors, SI7997DP-T1-GE3 ensures stable output voltage even when the load changes. Its Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R makes it a reliable element in multi-level power systems.