SI7997DP-T1-GE3

VISHAY INTERTECHNOLOGY INC

no image
 
SI7997DP-T1-GE3

SI7997DP-T1-GE3

Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Decreasing
Lead time

15 results found
AOD603A
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
5051100692
Available
Available
Low
Low
Increasing
Increasing
Decreasing
Decreasing
PGA460TPWR
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
TPS61081DRCR
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
74LVX4245MTCX
Available
Available
High
High
Stable
Stable
Stable
Stable
LMK1D1208RHDR
Available
Available
High
High
Stable
Stable
Stable
Stable
0805B104K500CT
Constrained
Constrained
Low
Low
Stable
Stable
Decreasing
Decreasing
0805B104M500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0805N681J501CT
Constrained
Constrained
Medium
Medium
Stable
Stable
Stable
Stable
AD847JRZ-REEL7
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
H5ANAG6NCJR-XNC
Available
Available
High
High
Stable
Stable
Stable
Stable
LM5050MKX-1/NOP...
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Stable
Stable
RT0402BRD073K09...
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
NVMFS5C682NLWFA...
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
CY62128EV30LL-4...
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Stable
Stable

Semiconductors

Transistors

Lead Time     34 weeks
Data Sheet     Download SI7997DP-T1-GE3 datasheet SI7997DP-T1-GE3

Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R

Technical Data

Manufacturer vishay intertechnology inc
MPN SI7997DP-T1-GE3
JESD-30 Code R-XDSO-C5
Configuration 2 P-Channel (Dual)
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form C BEND
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 2.0000
Number of Terminals 5.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 46.0000
Drain Current-Max (ID) (A) 60.0000
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 30.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 45.0000
Pulsed Drain Current-Max (IDM) (A) 100.0000
Drain-source On Resistance-Max (ohm) 0.0078
Time@Peak Reflow Temperature-Max (s) 40.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, SI7997DP-T1-GE3 optimizes energy distribution in electronic devices. Its Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, SI7997DP-T1-GE3 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for SI7997DP-T1-GE3 in the documentation section.

Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R