BAV199W,115
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| Diode Type | RECTIFIER DIODE |
| Application | GENERAL PURPOSE |
| JESD-30 Code | R-PDSO-G3 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Package Shape | RECTANGULAR |
| Package Style (Meter) | SMALL OUTLINE |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| J-STD-609 Code | e3 |
| Terminal Finish | TIN |
| Terminal Position | DUAL |
| Additional Feature | LOW LEAKAGE CURRENT |
| Number of Elements | 2 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Diode Element Material | SILICON |
| Output Current-Max (A) | 0.135 |
| Power Dissipation-Max (W) | 0.15 |
| Moisture Sensitivity Level | 1 |
| Peak Reflow Temperature (Cel) | 260 |
| Rep Pk Reverse Voltage-Max (V) | 85 |
| Reverse Recovery Time-Max (us) | 3 |
| Operating Temperature-Max (Cel) | 150 |
| Screening Level / Reference Standard | IEC-134 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Nexperia BV BAV199W,115 in the documentation section.
Low-leakage double diode
As part of the category Semiconductors and subcategory Semiconductors, BAV199W,115 optimizes energy distribution in electronic devices. Its Low-leakage double diode allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, BAV199W,115 ensures stable output voltage even when the load changes. Its Low-leakage double diode makes it a reliable element in multi-level power systems.
