BAV199W,115 NEXPERIA

BAV199W,115 NEXPERIA
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Semiconductors

Diodes

Lead Time     10 weeks

Low-leakage double diode

Technical Data

Manufacturer nexperia
MPN BAV199W,115
Diode Type RECTIFIER DIODE
Application GENERAL PURPOSE
JESD-30 Code R-PDSO-G3
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
J-STD-609 Code e3
Terminal Finish TIN
Terminal Position DUAL
Additional Feature LOW LEAKAGE CURRENT
Number of Elements 2.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Diode Element Material SILICON
Output Current-Max (A) 0.1350
Power Dissipation-Max (W) 0.1500
Moisture Sensitivity Level 1.0000
Peak Reflow Temperature (Cel) 260.0000
Rep Pk Reverse Voltage-Max (V) 85.0000
Reverse Recovery Time-Max (us) 3.0000
Operating Temperature-Max (Cel) 150.0000
Screening Level / Reference Standard IEC-134
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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Frequently Asked Questions

As part of the category Semiconductors and subcategory Diodes, BAV199W,115 optimizes energy distribution in electronic devices. Its Low-leakage double diode allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Diodes, BAV199W,115 ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for BAV199W,115 in the documentation section.

Low-leakage double diode

BC817-40-215