MT53E256M32D1KS-046IT:L

MICRON TECHNOLOGY INC

MT53E256M32D1KS-046IT:L
 
MT53E256M32D1KS-046IT:L

MT53E256M32D1KS-046IT:L

Availability
Available
Availability
Design risk
Medium
Design risk
Price trend
Increasing
Price trend
Lead time
Increasing
Lead time
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Semiconductors

Semiconductors

Lead Time     41 weeks

DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V/1.8V 200-Pin VFBGA

Technical Data

Manufacturer MICRON TECHNOLOGY INC
MPN MT53E256M32D1KS-046IT:L
I/O Type COMMON
Technology CMOS
Width (mm) 10.0000
Access Mode MULTI BANK PAGE BURST
Length (mm) 14.5000
JESD-30 Code R-PBGA-B200
Memory Width 32.0000
Package Code VFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e1
Memory IC Type LPDDR4 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192.0000
Number of Ports 1.0000
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position BOTTOM
Additional Feature SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
Memory Organization 256MX32
Number of Functions 1.0000
Number of Terminals 200.0000
Terminal Pitch (mm) 0.8000
Number of Words Code 256M
Memory Density (bits) 8589934592.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 0.9500
Supply Voltage-Max (V) 1.1700
Supply Voltage-Min (V) 1.0600
Supply Voltage-Nom (V) 1.1000
Number of Words (words) 268435456.0000
Sequential Burst Length 16,32
Standby Current-Max (A) 0.0086
Supply Current-Max (mA) 48.7000
Interleaved Burst Length 16,32
Package Equivalence Code BGA200,12X20,32/25
Clock Frequency-Max (MHz) 2133.0000
Operating Temperature-Max (Cel) 95.0000
Operating Temperature-Min (Cel) -40.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, MT53E256M32D1KS-046 IT:L optimizes energy distribution in electronic devices. Its DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V/1.8V 200-Pin VFBGA allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, MT53E256M32D1KS-046 IT:L ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MT53E256M32D1KS-046 IT:L in the documentation section.

DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V/1.8V 200-Pin VFBGA