MT47H32M16NF-25E:H MICRON TECHNOLOGY INC

MT47H32M16NF-25E:H MICRON TECHNOLOGY INC
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Semiconductors

Semiconductors

Lead Time     51 weeks
Data Sheet     Download MT47H32M16NF-25E:H datasheet MT47H32M16NF-25E:H

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray

Technical Data

Manufacturer micron technology inc
MPN MT47H32M16NF-25E:H
I/O Type COMMON
Technology CMOS
Width (mm) 8.0000
Access Mode FOUR BANK PAGE BURST
Length (mm) 12.5000
JESD-30 Code R-PBGA-B84
Memory Width 16.0000
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e1
Memory IC Type DDR2 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192.0000
Number of Ports 1.0000
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
DLA Qualification Not Qualified
Temperature Grade OTHER
Terminal Position BOTTOM
Additional Feature AUTO/SELF REFRESH
Memory Organization 32MX16
Number of Functions 1.0000
Number of Terminals 84.0000
Terminal Pitch (mm) 0.8000
Access Time-Max (ns) 0.4000
Number of Words Code 32M
Memory Density (bits) 536870912.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2000
Supply Voltage-Max (V) 1.9000
Supply Voltage-Min (V) 1.7000
Supply Voltage-Nom (V) 1.8000
Number of Words (words) 33554432.0000
Sequential Burst Length 4,8
Standby Current-Max (A) 0.0100
Supply Current-Max (mA) 215.0000
Interleaved Burst Length 4,8
Package Equivalence Code BGA84,9X15,32
Clock Frequency-Max (MHz) 400.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 85.0000
Operating Temperature-Min (Cel) 0.0000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, MT47H32M16NF-25E:H optimizes energy distribution in electronic devices. Its DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, MT47H32M16NF-25E:H ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for MT47H32M16NF-25E:H in the documentation section.

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray

MT47H64M16NF-25E-IT-M