IRF6623TRPBF

International Rectifier Corpor...

IRF6623TRPBF
 
IRF6623TRPBF

IRF6623TRPBF

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Semiconductors

Transistors

Data Sheet     Download IRF6623TRPBF datasheet IRF6623TRPBF

IRF6623 - 12V-300V N-CHANNEL POW

Technical Data

Manufacturer International Rectifier Corporation
MPN IRF6623TRPBF
Application SWITCHING
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) CHIP CARRIER
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e4
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish SILVER NICKEL
DLA Qualification Not Qualified
Terminal Position BOTTOM
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material UNSPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 42.0000
Drain Current-Max (ID) (A) 16.0000
Moisture Sensitivity Level 3.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 43.0000
Pulsed Drain Current-Max (IDM) (A) 120.0000
Drain-source On Resistance-Max (ohm) 0.0057
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

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CONTACT REASON

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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IRF6623TRPBF optimizes energy distribution in electronic devices. Its IRF6623 - 12V-300V N-CHANNEL POW allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IRF6623TRPBF ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IRF6623TRPBF in the documentation section.

IRF6623 - 12V-300V N-CHANNEL POW