IPP60R125CP

INFINEON TECHNOLOGIES AG

IPP60R125CP
 
IPP60R125CP

IPP60R125CP

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
15 results found
AONS66402
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
TCAN3413DR
Available
Available
High
High
Stable
Stable
Stable
Stable
TXB0104PWR
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
4053G-S16-R
Available
Available
High
High
Stable
Stable
Stable
Stable
TMP103DYFFR
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
INA219BIDCNR
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
MAX823TEUK+T
Available
Available
Medium
Medium
Stable
Stable
Increasing
Increasing
LMR14050SDDAR
Available
Available
Low
Low
Increasing
Increasing
Stable
Stable
SMV2025-079LF
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
UUD1H221MNL1GS
Unavailable
Unavailable
Low
Low
Increasing
Increasing
Decreasing
Decreasing
ADG704BRMZ-REEL...
Constrained
Constrained
Low
Low
Increasing
Increasing
Increasing
Increasing
XC2C64A-7VQG100...
Available
Available
High
High
Stable
Stable
Decreasing
Decreasing
HHXC250ARA101MF...
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
VESD05A1B-HD1-G...
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
IS42S16800F-7BL...
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     15 weeks
Data Sheet     Download IPP60R125CP datasheet IPP60R125CP

Trans MOSFET N-CH 600V 25A 3-Pin TO-220AB Tube

Technical Data

Manufacturer INFINEON TECHNOLOGIES AG
MPN IPP60R125CP
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-220AB
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Tin (Sn)
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 208.0000
Drain Current-Max (ID) (A) 25.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 600.0000
Peak Reflow Temperature (Cel) NOT SPECIFIED
Operating Temperature-Max (Cel) 150.0000
Avalanche Energy Rating (Eas) (mJ) 708.0000
Pulsed Drain Current-Max (IDM) (A) 82.0000
Drain-source On Resistance-Max (ohm) 0.1250
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, IPP60R125CP optimizes energy distribution in electronic devices. Its Trans MOSFET N-CH 600V 25A 3-Pin TO-220AB Tube allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, IPP60R125CP ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for IPP60R125CP in the documentation section.

Trans MOSFET N-CH 600V 25A 3-Pin TO-220AB Tube