FDN5618P

FAIRCHILD SEMICONDUCTOR CORP

FDN5618P
 
FDN5618P

FDN5618P

Availability
Available
Availability
Design risk
High
Design risk
Price trend
Decreasing
Price trend
Lead time
Stable
Lead time
15 results found
LM5166DRCT
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
105310-1104
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
MAX338CSE+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
WR08X221JGL
Unavailable
Unavailable
Medium
Medium
Stable
Stable
Stable
Stable
BGM113A256V2
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
SP1003-01DTG
Available
Available
Low
Low
Increasing
Increasing
Increasing
Increasing
WR06X1000FGL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
BX80684I39100
Available
Available
High
High
Stable
Stable
Stable
Stable
SMV2025-079LF
Available
Available
Low
Low
Decreasing
Decreasing
Stable
Stable
RCP1206W200RGEB
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing
LMK107BBJ226MA-...
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
LT8609HMSE#TRPB...
Constrained
Constrained
High
High
Stable
Stable
Stable
Stable
LM2675MX-5.0/NO...
Constrained
Constrained
Low
Low
Stable
Stable
Increasing
Increasing
GRM21BR61H475KE...
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Increasing
Increasing
17-21/G6C-AN1P1...
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable

Semiconductors

Transistors

Lead Time     8 weeks
Data Sheet     Download FDN5618P datasheet FDN5618P

MOSFETs SSOT-3 P-CH 60V

Technical Data

Manufacturer fairchild semiconductor corp
MPN FDN5618P
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 0.5000
Drain Current-Max (ID) (A) 1.2500
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Pulsed Drain Current-Max (IDM) (A) 10.0000
Drain-source On Resistance-Max (ohm) 0.1700
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDN5618P optimizes energy distribution in electronic devices. Its MOSFETs SSOT-3 P-CH 60V allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDN5618P ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDN5618P in the documentation section.

MOSFETs SSOT-3 P-CH 60V