FDN5618P FAIRCHILD SEMICONDUCTOR CORP

FDN5618P FAIRCHILD SEMICONDUCTOR CORP
Availability
Available
Availability
Design risk
High
Design risk
Price trend
Increasing
Price trend
Lead time
Stable
Lead time
15 results found
BMI160
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
TXB0104PWR
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
FF450R12ME4
Available
Available
Medium
Medium
Stable
Stable
Stable
Stable
MAX845ESA+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
CR32-1001-FL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
0402N181F500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
0603B103K101CT
Constrained
Constrained
Low
Low
Stable
Stable
Increasing
Increasing
CP2105-F01-GMR
Constrained
Constrained
Low
Low
Increasing
Increasing
Increasing
Increasing
LM5022MMX/NOPB
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
M25PE80-VMN6TP
Available
Available
High
High
Stable
Stable
Stable
Stable
MTFC4GACAALT-4M...
Available
Available
High
High
Stable
Stable
Stable
Stable
XC7K160T-2FFG67...
Unavailable
Unavailable
Medium
Medium
Stable
Stable
Stable
Stable
TCC0603X7R474K2...
Available
Available
High
High
Stable
Stable
Stable
Stable
MT41K256M8DA-10...
Available
Available
High
High
Stable
Stable
Increasing
Increasing
SAK-TC275TP-64F...
Available
Available
High
High
Stable
Stable
Stable
Stable

Semiconductors

Transistors

Lead Time     8 weeks
Data Sheet     Download FDN5618P datasheet FDN5618P

MOSFETs SSOT-3 P-CH 60V

Technical Data

Manufacturer fairchild semiconductor corp
MPN FDN5618P
Application SWITCHING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Package Shape RECTANGULAR
Package Style ( Meter ) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (W) 0.5000
Drain Current-Max (ID) (A) 1.2500
Moisture Sensitivity Level 1.0000
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 60.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 150.0000
Pulsed Drain Current-Max (IDM) (A) 10.0000
Drain-source On Resistance-Max (ohm) 0.1700
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, FDN5618P optimizes energy distribution in electronic devices. Its MOSFETs SSOT-3 P-CH 60V allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, FDN5618P ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for FDN5618P in the documentation section.

MOSFETs SSOT-3 P-CH 60V

FPF1006