What documentation is available for Cypress Semiconductor Corp FM25W256-GTR?

You can download the user manual and technical specifications for Cypress Semiconductor Corp FM25W256-GTR in the documentation section.

FM25W256-GTR by Cypress Semiconductor Corp | Other Memory ICs c-227 Distributor

Name: FM25W256-GTR by Cypress Semiconductor Corp
Brand: Cypress Semiconductor Corp
SKU: FM25W256-GTR-1308265799
Price: 3.5 USD
Availability: InStock

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Frequently Asked Questions

How does FM25W256-GTR contribute to energy efficiency?

As part of the category Semiconductors and subcategory Memory ICs, FM25W256-GTR optimizes energy distribution in electronic devices. Its Memory ICs, FM25W256-GTR, Cypress The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM 100 trillion read/write cycles or 100 million times more write cycles than EEPROM. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Features High-endurance 100 trillion read/writes Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Restriction of hazardous substances (RoHS) compliant allows minimizing losses and increasing the overall system efficiency.

Why is FM25W256-GTR suitable for complex power management systems?

As a component of the subcategory Memory ICs, FM25W256-GTR ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

What documentation is available for FM25W256-GTR?

You can download the user manual and technical specifications for FM25W256-GTR in the documentation section.

What are the key features of FM25W256-GTR?

Memory ICs, FM25W256-GTR, Cypress The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM 100 trillion read/write cycles or 100 million times more write cycles than EEPROM. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Features High-endurance 100 trillion read/writes Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Restriction of hazardous substances (RoHS) compliant

FM25W256-GTR

Cypress Semiconductor Corp