FM25V05-GTR
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512Kb Serial 3V F-RAM Memory
Technology | CMOS |
Width (mm) | 3.8985 |
Length (mm) | 4.889 |
JESD-30 Code | R-PDSO-G8 |
Memory Width | 8 |
Package Code | SOP |
Package Shape | RECTANGULAR |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | GULL WING |
Memory IC Type | FRAM |
Operating Mode | SYNCHRONOUS |
Parallel/Serial | SERIAL |
Serial Bus Type | SPI |
Terminal Finish | Pure Tin (Sn) |
Write Protection | HARDWARE/SOFTWARE |
DLA Qualification | Not Qualified |
Terminal Position | DUAL |
Additional Feature | also operates with 2minv supply @ 25 mhz and 4kv esd availabe |
Memory Organization | 64KX8 |
Number of Functions | 1 |
Number of Terminals | 8 |
Terminal Pitch (mm) | 1.27 |
Number of Words Code | 64K |
Memory Density (bits) | 524288 |
Package Body Material | PLASTIC/EPOXY |
Seated Height-Max (mm) | 1.727 |
Supply Voltage-Max (V) | 3.6 |
Supply Voltage-Min (V) | 2.7 |
Supply Voltage-Nom (V) | 3.3 |
Data Retention Time-Min | 10 |
Number of Words (words) | 65536 |
Standby Current-Max (A) | 0.00015 |
Standby Voltage-Min (V) | 2.7 |
Supply Current-Max (mA) | 3 |
Package Equivalence Code | SOP8,.25 |
Clock Frequency-Max (MHz) | 40 |
Moisture Sensitivity Level | 3 |
Peak Reflow Temperature (Cel) | 260 |
Endurance (Write/Erase Cycles) | 1.0E+14 |
Operating Temperature-Max (Cel) | 85 |
Operating Temperature-Min (Cel) | -40 |
Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Cypress Semiconductor Corporation FM25V05-GTR in the documentation section.
512Kb Serial 3V F-RAM Memory
As part of the category Semiconductors and subcategory Semiconductors, FM25V05-GTR optimizes energy distribution in electronic devices. Its 512Kb Serial 3V F-RAM Memory allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, FM25V05-GTR ensures stable output voltage even when the load changes. Its 512Kb Serial 3V F-RAM Memory makes it a reliable element in multi-level power systems.