AO4828
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MOSFET 2N-CH 60V 8SOIC
Application | SWITCHING |
JESD-30 Code | R-PDSO-G8 |
Configuration | 2 N-Channel (Dual) |
Package Shape | RECTANGULAR |
Package Style (Meter) | SMALL OUTLINE |
Surface Mount | YES |
Terminal Form | GULL WING |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Operating Mode | ENHANCEMENT MODE |
Terminal Position | DUAL |
Number of Elements | 2 |
Number of Terminals | 8 |
Package Body Material | PLASTIC/EPOXY |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (W) | 2 |
Drain Current-Max (ID) (A) | 4.5 |
Transistor Element Material | SILICON |
DS Breakdown Voltage-Min (V) | 60 |
Feedback Cap-Max (Crss) (pF) | 25 |
Operating Temperature-Max (Cel) | 150 |
Operating Temperature-Min (Cel) | -55 |
Power Dissipation Ambient-Max (W) | 2 |
Avalanche Energy Rating (Eas) (mJ) | 18 |
Pulsed Drain Current-Max (IDM) (A) | 20 |
Drain-source On Resistance-Max (ohm) | 0.056 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Alpha and Omega Semiconductor AO4828 in the documentation section.
MOSFET 2N-CH 60V 8SOIC
As part of the category Semiconductors and subcategory Semiconductors, AO4828 optimizes energy distribution in electronic devices. Its MOSFET 2N-CH 60V 8SOIC allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, AO4828 ensures stable output voltage even when the load changes. Its MOSFET 2N-CH 60V 8SOIC makes it a reliable element in multi-level power systems.