AS4C256M16D3C-12BIN ALLIANCE MEMORY INC

AS4C256M16D3C-12BIN ALLIANCE MEMORY INC
Availability
Available
Availability
Design risk
Low
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time
15 results found
1734366-1
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
AOTL66912
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
0314030.HXP
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Increasing
Increasing
CS4334-KSZR
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
MAX998EUT+T
Available
Available
Medium
Medium
Increasing
Increasing
Stable
Stable
TPS24750RUVR
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Stable
Stable
WR06X2202FGL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Stable
Stable
WR08X2001FGL
Available
Available
High
High
Stable
Stable
Stable
Stable
WGI210ATSLJXR
Unavailable
Unavailable
Medium
Medium
Decreasing
Decreasing
Decreasing
Decreasing
0603B224K500CT
Constrained
Constrained
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
ADN8835ACPZ-R7
Available
Available
Low
Low
Stable
Stable
Decreasing
Decreasing
MAX16926GTP/V+T
Available
Available
High
High
Increasing
Increasing
Decreasing
Decreasing
LM26420YSQX/NOP...
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
BSCH001005058N2...
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
MT41K256M16TW-1...
Unavailable
Unavailable
High
High
Decreasing
Decreasing
Increasing
Increasing

Semiconductors

Semiconductors

Lead Time     53 weeks
Data Sheet     Download AS4C256M16D3C-12BIN datasheet AS4C256M16D3C-12BIN

DRAM Chip DDR3L SDRAM 4G-bit 256Mx16 1.35V/1.5V 96-Pin FBGA Tray

Technical Data

Manufacturer alliance memory inc
MPN AS4C256M16D3C-12BIN
I/O Type COMMON
Technology CMOS
Width (mm) 7.5000
Access Mode MULTI BANK PAGE BURST
Length (mm) 13.5000
JESD-30 Code R-PBGA-B96
Memory Width 16.0000
Package Code TFBGA
Self Refresh YES
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Surface Mount YES
Terminal Form BALL
J-STD-609 Code e1
Memory IC Type DDR3 DRAM
Operating Mode SYNCHRONOUS
Refresh Cycles 8192.0000
Number of Ports 1.0000
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Temperature Grade INDUSTRIAL
Terminal Position BOTTOM
Memory Organization 256MX16
Number of Functions 1.0000
Number of Terminals 96.0000
Terminal Pitch (mm) 0.8000
Number of Words Code 256M
Memory Density (bits) 4294967296.0000
Package Body Material PLASTIC/EPOXY
Output Characteristics 3-STATE
Seated Height-Max (mm) 1.2000
Supply Voltage-Max (V) 1.5750
Supply Voltage-Min (V) 1.4250
Supply Voltage-Nom (V) 1.5000
Number of Words (words) 268435456.0000
Sequential Burst Length 4,8
Standby Current-Max (A) 0.0080
Standby Voltage-Min (V) 1.4250
Supply Current-Max (mA) 190.0000
Interleaved Burst Length 4,8
Package Equivalence Code BGA96,9X16,32
Clock Frequency-Max (MHz) 800.0000
Moisture Sensitivity Level 3.0000
Peak Reflow Temperature (Cel) 260.0000
Operating Temperature-Max (Cel) 95.0000
Operating Temperature-Min (Cel) -40.0000
Time@Peak Reflow Temperature-Max (s) 30.0000
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Semiconductors, AS4C256M16D3C-12BIN optimizes energy distribution in electronic devices. Its DRAM Chip DDR3L SDRAM 4G-bit 256Mx16 1.35V/1.5V 96-Pin FBGA Tray allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Semiconductors, AS4C256M16D3C-12BIN ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for AS4C256M16D3C-12BIN in the documentation section.

DRAM Chip DDR3L SDRAM 4G-bit 256Mx16 1.35V/1.5V 96-Pin FBGA Tray

AO3406