AS4C256M16D3C-12BIN
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DRAM Chip DDR3L SDRAM 4G-bit 256Mx16 1.35V/1.5V 96-Pin FBGA Tray
| I/O Type | COMMON |
| Technology | CMOS |
| Width (mm) | 7.5000 |
| Access Mode | MULTI BANK PAGE BURST |
| Length (mm) | 13.5000 |
| JESD-30 Code | R-PBGA-B96 |
| Memory Width | 16 |
| Package Code | TFBGA |
| Self Refresh | YES |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Surface Mount | YES |
| Terminal Form | BALL |
| J-STD-609 Code | e1 |
| Memory IC Type | DDR3 DRAM |
| Operating Mode | SYNCHRONOUS |
| Refresh Cycles | 8192 |
| Number of Ports | 1 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Temperature Grade | INDUSTRIAL |
| Terminal Position | BOTTOM |
| Memory Organization | 256MX16 |
| Number of Functions | 1 |
| Number of Terminals | 96 |
| Terminal Pitch (mm) | 0.800 |
| Number of Words Code | 256M |
| Memory Density (bits) | 4294967296.0000000000000000 |
| Package Body Material | PLASTIC/EPOXY |
| Output Characteristics | 3-STATE |
| Seated Height-Max (mm) | 1.2000 |
| Supply Voltage-Max (V) | 1.57500 |
| Supply Voltage-Min (V) | 1.42500 |
| Supply Voltage-Nom (V) | 1.5 |
| Number of Words (words) | 268435456.0000000000000000 |
| Sequential Burst Length | 4,8 |
| Standby Current-Max (A) | 0.008000000000000 |
| Standby Voltage-Min (V) | 1.425000 |
| Supply Current-Max (mA) | 190.000000000000000 |
| Interleaved Burst Length | 4,8 |
| Package Equivalence Code | BGA96,9X16,32 |
| Clock Frequency-Max (MHz) | 800.00000 |
| Moisture Sensitivity Level | 3 |
| Peak Reflow Temperature (Cel) | 260 |
| Operating Temperature-Max (Cel) | 95.0 |
| Operating Temperature-Min (Cel) | -40.0 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
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CONTACT REASON
Sourceability North America, LLC
9715 Burnet Rd, Ste 200You can download the user manual and technical specifications for Alliance Memory, Inc AS4C256M16D3C-12BIN in the documentation section.
DRAM Chip DDR3L SDRAM 4G-bit 256Mx16 1.35V/1.5V 96-Pin FBGA Tray
As part of the category Semiconductors and subcategory Semiconductors, AS4C256M16D3C-12BIN optimizes energy distribution in electronic devices. Its DRAM Chip DDR3L SDRAM 4G-bit 256Mx16 1.35V/1.5V 96-Pin FBGA Tray allows minimizing losses and increasing the overall system efficiency.
As a component of the subcategory Semiconductors, AS4C256M16D3C-12BIN ensures stable output voltage even when the load changes. Its DRAM Chip DDR3L SDRAM 4G-bit 256Mx16 1.35V/1.5V 96-Pin FBGA Tray makes it a reliable element in multi-level power systems.
