G3R75MT12D

GENESIC SEMICONDUCTOR INC

no image
 
G3R75MT12D

G3R75MT12D

Availability
Available
Availability
Design risk
Medium
Design risk
Price trend
Stable
Price trend
Lead time
Stable
Lead time

15 results found
1N4753A
Available
Available
Medium
Medium
Stable
Stable
Stable
Stable
FZT458TA
Available
Available
High
High
Decreasing
Decreasing
Increasing
Increasing
CPC1017NTR
Available
Available
Low
Low
Increasing
Increasing
Stable
Stable
BQ24040DSQR
Constrained
Constrained
Low
Low
Increasing
Increasing
Decreasing
Decreasing
CS4334-KSZR
Available
Available
High
High
Decreasing
Decreasing
Stable
Stable
WR06X101JTL
Unavailable
Unavailable
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
MAX3161EAG+T
Available
Available
High
High
Stable
Stable
Stable
Stable
MAX6817EUT+T
Available
Available
Medium
Medium
Decreasing
Decreasing
Stable
Stable
WR04X4702FDL
Unavailable
Unavailable
Low
Low
Stable
Stable
Stable
Stable
0603X475K6R3CT
Constrained
Constrained
Low
Low
Stable
Stable
Decreasing
Decreasing
1206B475K250CT
Available
Available
Medium
Medium
Stable
Stable
Stable
Stable
LM7301IM5X/NOPB
Constrained
Constrained
Low
Low
Increasing
Increasing
Stable
Stable
AD5664ARMZ-REEL...
Constrained
Constrained
Low
Low
Stable
Stable
Stable
Stable
AP2114HA-3.3TRG...
Available
Available
Low
Low
Decreasing
Decreasing
Decreasing
Decreasing
FH52E-40S-0.5SH...
Available
Available
Low
Low
Decreasing
Decreasing
Increasing
Increasing

Semiconductors

Transistors

Lead Time     26 weeks
Data Sheet     Download G3R75MT12D datasheet G3R75MT12D

SIC MOSFET N-CH 41A TO247-3

Technical Data

Manufacturer genesic semiconductor inc
MPN G3R75MT12D
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 182.0000
Drain Current-Max (ID) (A) 36.0000
Transistor Element Material SILICON CARBIDE
DS Breakdown Voltage-Min (V) 1200.0000
Feedback Cap-Max (Crss) (pF) 3.8000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 199.0000
Pulsed Drain Current-Max (IDM) (A) 70.0000
Drain-source On Resistance-Max (ohm) 0.0970
Screening Level / Reference Standard IEC-60747-8-4
Availability In stock

Submit Request

CONTACT REASON

Connect With Us

HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

FOR GENERAL INQUIRES

Email [email protected]

Phone +1-888-952-9225

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, G3R75MT12D optimizes energy distribution in electronic devices. Its SIC MOSFET N-CH 41A TO247-3 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, G3R75MT12D ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for G3R75MT12D in the documentation section.

SIC MOSFET N-CH 41A TO247-3

GD32F350RBT6