G3R75MT12D

GENESIC SEMICONDUCTOR INC

G3R75MT12D
 
G3R75MT12D

G3R75MT12D

Availability
Available
Availability
Design risk
Medium
Design risk
Price trend
Decreasing
Price trend
Lead time
Increasing
Lead time
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Semiconductors

Transistors

Lead Time     26 weeks
Data Sheet     Download G3R75MT12D datasheet G3R75MT12D

SIC MOSFET N-CH 41A TO247-3

Technical Data

Manufacturer genesic semiconductor inc
MPN G3R75MT12D
Application SWITCHING
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
Package Shape RECTANGULAR
Package Style ( Meter ) FLANGE MOUNT
Surface Mount NO
Terminal Form THROUGH-HOLE
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Position SINGLE
Number of Elements 1.0000
Number of Terminals 3.0000
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 182.0000
Drain Current-Max (ID) (A) 36.0000
Transistor Element Material SILICON CARBIDE
DS Breakdown Voltage-Min (V) 1200.0000
Feedback Cap-Max (Crss) (pF) 3.8000
Operating Temperature-Max (Cel) 175.0000
Operating Temperature-Min (Cel) -55.0000
Avalanche Energy Rating (Eas) (mJ) 199.0000
Pulsed Drain Current-Max (IDM) (A) 70.0000
Drain-source On Resistance-Max (ohm) 0.0970
Screening Level / Reference Standard IEC-60747-8-4
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HEADQUARTERS

Sourceability North America, LLC

9715 Burnet Rd, Ste 200 Austin, TX 78758-5215

Frequently Asked Questions

As part of the category Semiconductors and subcategory Transistors, G3R75MT12D optimizes energy distribution in electronic devices. Its SIC MOSFET N-CH 41A TO247-3 allows minimizing losses and increasing the overall system efficiency.

As a component of the subcategory Transistors, G3R75MT12D ensures stable output voltage even when the load changes. Its makes it a reliable element in multi-level power systems.

You can download the user manual and technical specifications for G3R75MT12D in the documentation section.

SIC MOSFET N-CH 41A TO247-3