ZXTN2010ZTA

Diodes Incorporated

ZXTN2010ZTA

Availability

Design risk

Price trend

Lead time

Semiconductors

Power Bipolar Transistors

15 results found

Availability

Design risk

Price trend

Lead time

Available
High
Decrease
Stable
FPF1006 (FAIRCHILDSEMICONDUCTORCORP)
View Details
Available
Low
Stable
Decrease
1-796329-1 (TECONNECTIVITYLTD)
View Details
Available
High
Stable
Stable
CR16-182-JY (ASJPTELTD)
View Details
Available
Low
Decrease
Decrease
NEO-M8U-06B (UBLOXAG)
View Details
Available
Low
Decrease
Increase
TCA9546APWR (TEXASINSTRUMENTSINC)
View Details
Available
High
Stable
Stable
5CEBA4F23C8N (INTELCORP)
View Details
Constrained
Low
Increase
Stable
TPS61093DSKR (TEXASINSTRUMENTSINC)
View Details
Unavailable
Low
Stable
Stable
WR08X1000FGL (WALSINTECHNOLOGYCORP)
View Details
Unavailable
High
Decrease
Stable
EPM240T100I5N (INTELCORP)
View Details
Available
High
Stable
Stable
HL1-HTM-DC24V (PANASONICCORP)
View Details
Available
Low
Decrease
Increase
ACPL-H342-560E (BROADCOMLTD)
View Details
Unavailable
Low
Decrease
Stable
CBT3257ADS,118 (NEXPERIA)
View Details
Available
High
Decrease
Stable
MWSA1206S-3R3MT (SUNLORDELECTRONICS)
View Details
Constrained
Low
Decrease
Stable
AD9834BRUZ-REEL7 (ANALOGDEVICESINC)
View Details
Unavailable
Low
Decrease
Increase
TLP291(GR-TP,SE(T (TOSHIBACORP)
View Details

Semiconductors

Power Bipolar Transistors

Lead time 20 weeks
Data sheet ZXTN2010ZTA

Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) SOT-89 T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PSSO-F3
Configuration Single
Package Shape RECTANGULAR
Package Style SOT-89 (SC-62)
Surface Mount YES
Terminal Form FLAT
J-STD-609 Code e3
VCEsat-Max (V) 0.23
Case Connection COLLECTOR
Terminal Finish MATTE TIN
DLA Qualification Not Qualified
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 20
Power Dissipation-Max (W) 2.1
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) 260
Collector Current-Max (IC) (A) 5
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Collector-emitter Voltage-Max (V) 60
Collector-base Capacitance-Max (pF) 31
Transition Frequency-Nom (fT) (MHz) 130
Screening Level / Reference Standard MIL-STD-202
Time@Peak Reflow Temperature-Max (s) 30
Width 2.6 mm
Length 4.6 mm

Submit request

CONTACT REASON

Connect with us

Sourceability North America, LLC

9715 Burnet Rd, Ste 200
Austin, TX 78758-5215

Frequently Asked Questions

What documentation is available for Diodes Incorporated ZXTN2010ZTA?

You can download the user manual and technical specifications for Diodes Incorporated ZXTN2010ZTA in the documentation section.

What are the key features of Diodes Incorporated ZXTN2010ZTA?

Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) SOT-89 T/R

How does Diodes Incorporated ZXTN2010ZTA contribute to energy efficiency?

As part of the category Semiconductors and subcategory Semiconductors, ZXTN2010ZTA optimizes energy distribution in electronic devices. Its Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) SOT-89 T/R allows minimizing losses and increasing the overall system efficiency.

Why is ZXTN2010ZTA suitable for complex power management systems?

As a component of the subcategory Semiconductors, ZXTN2010ZTA ensures stable output voltage even when the load changes. Its Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) SOT-89 T/R makes it a reliable element in multi-level power systems.