2SC3583G-S-AL6-R

UTC, Ltd.

2SC3583G-S-AL6-R

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Bipolar Transistors

Lead time 6 weeks
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Bipolar Transistors

Lead time 6 weeks

Small Signal Bipolar Transistor, 0.065A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon

Technical Data
Application AMPLIFIER
JESD-30 Code R-PDSO-G6
Configuration SINGLE
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Number of Elements 1
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type NPN
DC Current Gain-Min (hFE) 125
Transistor Element Material SILICON
Peak Reflow Temperature (Cel) NOT SPECIFIED
Collector Current-Max (IC) (A) 0.065
Operating Temperature-Max (Cel) 150
Collector-emitter Voltage-Max (V) 10
Transition Frequency-Nom (fT) (MHz) 9000
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Sourceability North America, LLC

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Austin, TX 78758-5215