RU1C001UNTCL

ROHM Semiconductor

RU1C001UNTCL

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet RU1C001UNTCL
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet RU1C001UNTCL

Trans MOSFET N-CH 20V 0.1A 3-Pin UMTF T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-F3
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form FLAT
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Terminal Finish Tin (Sn)
Terminal Position DUAL
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 0.15
Drain Current-Max (ID) (A) 0.1
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 20
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Pulsed Drain Current-Max (IDM) (A) 0.4
Drain-source On Resistance-Max (ohm) 4.2
Time@Peak Reflow Temperature-Max (s) 10

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