IRLL2705TRPBF

INFINEON TECHNOLOGIES AG

IRLL2705TRPBF

Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet IRLL2705TRPBF
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Availability

Design risk

Price trend

Lead time

Semiconductors

Small Signal Field-Effect Transistors

Lead time 6 weeks
Data sheet IRLL2705TRPBF

Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R

Technical Data
Application SWITCHING
JESD-30 Code R-PDSO-G4
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-261AA
Package Shape RECTANGULAR
Package Style (Meter) SMALL OUTLINE
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Matte Tin (Sn)
DLA Qualification Not Qualified
Terminal Position DUAL
Number of Elements 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 2.1
Drain Current-Max (ID) (A) 3.8
Moisture Sensitivity Level 1
Transistor Element Material SILICON
DS Breakdown Voltage-Min (V) 55
Feedback Cap-Max (Crss) (pF) 92
Peak Reflow Temperature (Cel) 260
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Avalanche Energy Rating (Eas) (mJ) 110
Pulsed Drain Current-Max (IDM) (A) 30
Drain-source On Resistance-Max (ohm) 0.051
Time@Peak Reflow Temperature-Max (s) 30

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